@inproceedings{ee46bd13cbec423f970c7577533f4a5d,
title = "Effects of defects on the electrical and magnetic properties of Ga 1-xMnxAs layer",
abstract = "We investigated the effects of V/III flux ratios on the Curie temperature, TC, in Ga1-xMnxAs layers with various Mn mole fractions of x = 0.03 and 0.05. A 75 nm thick GaMnAs layer was grown at the temperature of 250°C with various V/III flux ratios of 25-34. The low temperature molecular beam epitaxy (LT-MBE) method for growth of GaMnAs layer caused the defects related by excess As and Mn interstitial, and these leaded the formation of deep level. We investigated that formation of deep level was established with various Mn mole fraction for V/III flux ratio 34. The changes of TC are observed by varying V/III flux ratio with a fixed Mn mole fraction. The TC in the sample grown with a lower V/III flux ratio of 25 is found to be higher comparing to that with higher V/III flux ratio of 34 at a fixed high Mn concentration (x = 0.05). Although the Mn concentration Increases, the TC is not much changed when the V/III flux ratio is high of 34. The changes of TC with various V/III flux ratios are explained by the existence of low temperature grown defects, which are clarified by the deep level transient spectroscopy measurement. The prime species of defects are found to be AsGa, and MnI etc.",
author = "D. Koh and Park, {J. B.} and Park, {Y. J.} and Lee, {J. I.} and C. Park and H. Cho and Kim, {Y. M.} and Park, {I. W.} and Chung, {K. S.}",
year = "2004",
language = "English",
isbn = "1558998055",
series = "Materials Research Society Symposium Proceedings",
pages = "27--34",
booktitle = "Fabrication and New Applications of Nanomagnetic Structures",
note = "2004 MRS Fall Meeting ; Conference date: 29-11-2004 Through 03-12-2004",
}