Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films

Kiseok Jeon; Seung Wook Shin; Jaeseung Jo; Myung Sang Kim; Jae Cheol Shin; Chaehwan Jeong; Jun Hyung Lim; Junho Song; Jaeyeong Heo; Jin Hyeok Kim

doi:10.1016/j.cap.2014.08.022

Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films

Kiseok Jeon, Seung Wook Shin, Jaeseung Jo, Myung Sang Kim, Jae Cheol Shin, Chaehwan Jeong, Jun Hyung Lim, Junho Song, Jaeyeong Heo, Jin Hyeok Kim

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2-4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices.

Original language	English
Pages (from-to)	1591-1595
Number of pages	5
Journal	Current Applied Physics
Volume	14
Issue number	11
DOIs	https://doi.org/10.1016/j.cap.2014.08.022
State	Published - Nov 2014

Keywords

Amorphous oxide semiconductor
Electron-beam irradiation
Indium gallium zinc oxide

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10.1016/j.cap.2014.08.022

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@article{5a0dbe764e6c4581ba2849d917a4fe12,

title = "Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films",

abstract = "High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2-4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices.",

keywords = "Amorphous oxide semiconductor, Electron-beam irradiation, Indium gallium zinc oxide",

author = "Kiseok Jeon and Shin, {Seung Wook} and Jaeseung Jo and Kim, {Myung Sang} and Shin, {Jae Cheol} and Chaehwan Jeong and Lim, {Jun Hyung} and Junho Song and Jaeyeong Heo and Kim, {Jin Hyeok}",

year = "2014",

month = nov,

doi = "10.1016/j.cap.2014.08.022",

language = "English",

volume = "14",

pages = "1591--1595",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "11",

}

TY - JOUR

T1 - Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films

AU - Jeon, Kiseok

AU - Shin, Seung Wook

AU - Jo, Jaeseung

AU - Kim, Myung Sang

AU - Shin, Jae Cheol

AU - Jeong, Chaehwan

AU - Lim, Jun Hyung

AU - Song, Junho

AU - Heo, Jaeyeong

AU - Kim, Jin Hyeok

PY - 2014/11

Y1 - 2014/11

N2 - High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2-4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices.

AB - High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2-4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices.

KW - Amorphous oxide semiconductor

KW - Electron-beam irradiation

KW - Indium gallium zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=84907664749&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2014.08.022

DO - 10.1016/j.cap.2014.08.022

M3 - Article

AN - SCOPUS:84907664749

SN - 1567-1739

VL - 14

SP - 1591

EP - 1595

JO - Current Applied Physics

JF - Current Applied Physics

IS - 11

ER -

Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films

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Keywords

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