Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films

Kiseok Jeon; Seung Wook Shin; Jaeseung Jo; Myung Sang Kim; Jae Cheol Shin; Chaehwan Jeong; Jun Hyung Lim; Junho Song; Jaeyeong Heo; Jin Hyeok Kim

doi:10.1016/j.cap.2014.08.022

Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films

Kiseok Jeon
, Seung Wook Shin
, Jaeseung Jo
, Myung Sang Kim
, Jae Cheol Shin
, Chaehwan Jeong
, Jun Hyung Lim
, Junho Song
, Jaeyeong Heo
, Jin Hyeok Kim

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2-4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices.

Original language	English
Pages (from-to)	1591-1595
Number of pages	5
Journal	Current Applied Physics
Volume	14
Issue number	11
DOIs	https://doi.org/10.1016/j.cap.2014.08.022
State	Published - Nov 2014

Keywords

Amorphous oxide semiconductor
Electron-beam irradiation
Indium gallium zinc oxide

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10.1016/j.cap.2014.08.022

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title = "Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films",

abstract = "High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2-4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices.",

keywords = "Amorphous oxide semiconductor, Electron-beam irradiation, Indium gallium zinc oxide",

author = "Kiseok Jeon and Shin, \{Seung Wook\} and Jaeseung Jo and Kim, \{Myung Sang\} and Shin, \{Jae Cheol\} and Chaehwan Jeong and Lim, \{Jun Hyung\} and Junho Song and Jaeyeong Heo and Kim, \{Jin Hyeok\}",

year = "2014",

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doi = "10.1016/j.cap.2014.08.022",

language = "English",

volume = "14",

pages = "1591--1595",

journal = "Current Applied Physics",

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TY - JOUR

T1 - Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films

AU - Jeon, Kiseok

AU - Shin, Seung Wook

AU - Jo, Jaeseung

AU - Kim, Myung Sang

AU - Shin, Jae Cheol

AU - Jeong, Chaehwan

AU - Lim, Jun Hyung

AU - Song, Junho

AU - Heo, Jaeyeong

AU - Kim, Jin Hyeok

PY - 2014/11

Y1 - 2014/11

N2 - High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2-4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices.

AB - High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2-4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices.

KW - Amorphous oxide semiconductor

KW - Electron-beam irradiation

KW - Indium gallium zinc oxide

UR - https://www.scopus.com/pages/publications/84907664749

U2 - 10.1016/j.cap.2014.08.022

DO - 10.1016/j.cap.2014.08.022

M3 - Article

AN - SCOPUS:84907664749

SN - 1567-1739

VL - 14

SP - 1591

EP - 1595

JO - Current Applied Physics

JF - Current Applied Physics

IS - 11

ER -

Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films

Abstract

Keywords

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