Effects of interface Al2O3 passivation layer for High-k HfO2 on GaAs

Dong Chan Suh; Young Dae Cho; Dae Hong Ko; Yongshik Lee; Kwun Bum Chung; Mann Ho Cho

doi:10.1149/1.3516615

Effects of interface Al₂O₃ passivation layer for High-k HfO₂ on GaAs

Dong Chan Suh, Young Dae Cho, Dae Hong Ko, Yongshik Lee, Kwun Bum Chung, Mann Ho Cho

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The effects of Al₂ O₃ passivation, formed by atomic layer deposition (ALD) at the interface of Hf O₂ /GaAs, were investigated by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and capacitance-voltage (C-V) measurements. The results indicate that the incorporation of Ga by diffusion into the Hf O ₂ layer is reduced by the Al₂ O₃ passivation at the Hf O₂ /GaAs interface. The Ga and As contents of the Hf O ₂ films decreased with increasing amount of interfacial Al ₂ O₃ passivation, while the capacitance value decreased. The Al₂ O₃ phase optimized at five ALD cycles effectively suppressed the formation of interfacial oxide and subsequently improved the C-V electrical properties.

Original language	English
Pages (from-to)	H63-H65
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	2
DOIs	https://doi.org/10.1149/1.3516615
State	Published - 2011

Access to Document

10.1149/1.3516615

Cite this

@article{90ce53ee312e4cdc90c11b15a521b051,

title = "Effects of interface Al2O3 passivation layer for High-k HfO2 on GaAs",

abstract = "The effects of Al2 O3 passivation, formed by atomic layer deposition (ALD) at the interface of Hf O2 /GaAs, were investigated by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and capacitance-voltage (C-V) measurements. The results indicate that the incorporation of Ga by diffusion into the Hf O 2 layer is reduced by the Al2 O3 passivation at the Hf O2 /GaAs interface. The Ga and As contents of the Hf O 2 films decreased with increasing amount of interfacial Al 2 O3 passivation, while the capacitance value decreased. The Al2 O3 phase optimized at five ALD cycles effectively suppressed the formation of interfacial oxide and subsequently improved the C-V electrical properties.",

author = "Suh, {Dong Chan} and Cho, {Young Dae} and Ko, {Dae Hong} and Yongshik Lee and Chung, {Kwun Bum} and Cho, {Mann Ho}",

year = "2011",

doi = "10.1149/1.3516615",

language = "English",

volume = "14",

pages = "H63--H65",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "2",

}

TY - JOUR

T1 - Effects of interface Al2O3 passivation layer for High-k HfO2 on GaAs

AU - Suh, Dong Chan

AU - Cho, Young Dae

AU - Ko, Dae Hong

AU - Lee, Yongshik

AU - Chung, Kwun Bum

AU - Cho, Mann Ho

PY - 2011

Y1 - 2011

N2 - The effects of Al2 O3 passivation, formed by atomic layer deposition (ALD) at the interface of Hf O2 /GaAs, were investigated by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and capacitance-voltage (C-V) measurements. The results indicate that the incorporation of Ga by diffusion into the Hf O 2 layer is reduced by the Al2 O3 passivation at the Hf O2 /GaAs interface. The Ga and As contents of the Hf O 2 films decreased with increasing amount of interfacial Al 2 O3 passivation, while the capacitance value decreased. The Al2 O3 phase optimized at five ALD cycles effectively suppressed the formation of interfacial oxide and subsequently improved the C-V electrical properties.

AB - The effects of Al2 O3 passivation, formed by atomic layer deposition (ALD) at the interface of Hf O2 /GaAs, were investigated by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and capacitance-voltage (C-V) measurements. The results indicate that the incorporation of Ga by diffusion into the Hf O 2 layer is reduced by the Al2 O3 passivation at the Hf O2 /GaAs interface. The Ga and As contents of the Hf O 2 films decreased with increasing amount of interfacial Al 2 O3 passivation, while the capacitance value decreased. The Al2 O3 phase optimized at five ALD cycles effectively suppressed the formation of interfacial oxide and subsequently improved the C-V electrical properties.

UR - http://www.scopus.com/inward/record.url?scp=78951478114&partnerID=8YFLogxK

U2 - 10.1149/1.3516615

DO - 10.1149/1.3516615

M3 - Article

AN - SCOPUS:78951478114

SN - 1099-0062

VL - 14

SP - H63-H65

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Effects of interface Al₂O₃ passivation layer for High-k HfO₂ on GaAs

Abstract

Access to Document

Other files and links

Fingerprint

Cite this