Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs

Eun Kyu Kim, Hoon Young Cho, Suk Ki Min, Sung Ho Choh, Susumu Namba

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The leakage current effects for the midgap levels in the electron-beam-metallized (EBM) Al/GaAs junction were studied by isothermal capacitance transient spectroscopy. In this junction, a new electron deep level which might be due to the surface defects induced during the EBM process was detected. The observed thermal emission time constants of the new deep level and the EL2 level (Ec -0.81 eV) in EBM-Al/GaAs were increased during the low-temperature annealing up to 355 °C, while the leakage current density in this junction was decreased down about 4×10-7 A/cm2. We represent that these behaviors of the midgap levels could be well explained by the effect of the leakage current in the Al/GaAs Schottky junction.

Original languageEnglish
Pages (from-to)1380-1383
Number of pages4
JournalJournal of Applied Physics
Volume67
Issue number3
DOIs
StatePublished - 1990

Fingerprint

Dive into the research topics of 'Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs'. Together they form a unique fingerprint.

Cite this