Effects of N2O plasma treatment on perhydropolysilazane spin-on-dielectrics for inter-layer-dielectric applications

Kyoung Seok Park; Pil Seok Ko; Sam Dong Kim

doi:10.1016/j.tsf.2013.11.104

Effects of N₂O plasma treatment on perhydropolysilazane spin-on-dielectrics for inter-layer-dielectric applications

Kyoung Seok Park
, Pil Seok Ko
, Sam Dong Kim

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Effects of the N₂O plasma treatment (PT) on perhydropolysilazane spin-on-dielectric (PHPS SOD) were examined as potential inter-layer- dielectrics (ILDs) for sub-30 nm Si circuits. The spin-coated PHPS (18.5 wt.%) ILD layers converted at 650 C were integrated with the 0.18 μm Si front-end-of-the line process. A modified contact pre-cleaning scheme using N₂O PT produced more uniform and stable contact chain resistances from the SOD ILDs than the case of pre-cleaning only by buffered oxide etcher. Our analysis shows that this enhancement is due to the minimized carbon contamination on the PHPS side-wall surface densified by PT.

Original language	English
Pages (from-to)	57-60
Number of pages	4
Journal	Thin Solid Films
Volume	551
DOIs	https://doi.org/10.1016/j.tsf.2013.11.104
State	Published - 31 Jan 2014

Keywords

Inter-layer-dielectric
NO plasma treatment
Perhydropolysilazane
Spin-on-dielectric

Access to Document

10.1016/j.tsf.2013.11.104

Cite this

@article{cfd58da03c364cfbb58ab4d756d5392d,

title = "Effects of N2O plasma treatment on perhydropolysilazane spin-on-dielectrics for inter-layer-dielectric applications",

abstract = "Effects of the N2O plasma treatment (PT) on perhydropolysilazane spin-on-dielectric (PHPS SOD) were examined as potential inter-layer- dielectrics (ILDs) for sub-30 nm Si circuits. The spin-coated PHPS (18.5 wt.\%) ILD layers converted at 650 C were integrated with the 0.18 μm Si front-end-of-the line process. A modified contact pre-cleaning scheme using N2O PT produced more uniform and stable contact chain resistances from the SOD ILDs than the case of pre-cleaning only by buffered oxide etcher. Our analysis shows that this enhancement is due to the minimized carbon contamination on the PHPS side-wall surface densified by PT.",

keywords = "Inter-layer-dielectric, NO plasma treatment, Perhydropolysilazane, Spin-on-dielectric",

author = "Park, \{Kyoung Seok\} and Ko, \{Pil Seok\} and Kim, \{Sam Dong\}",

year = "2014",

month = jan,

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doi = "10.1016/j.tsf.2013.11.104",

language = "English",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - Effects of N2O plasma treatment on perhydropolysilazane spin-on-dielectrics for inter-layer-dielectric applications

AU - Park, Kyoung Seok

AU - Ko, Pil Seok

AU - Kim, Sam Dong

PY - 2014/1/31

Y1 - 2014/1/31

N2 - Effects of the N2O plasma treatment (PT) on perhydropolysilazane spin-on-dielectric (PHPS SOD) were examined as potential inter-layer- dielectrics (ILDs) for sub-30 nm Si circuits. The spin-coated PHPS (18.5 wt.%) ILD layers converted at 650 C were integrated with the 0.18 μm Si front-end-of-the line process. A modified contact pre-cleaning scheme using N2O PT produced more uniform and stable contact chain resistances from the SOD ILDs than the case of pre-cleaning only by buffered oxide etcher. Our analysis shows that this enhancement is due to the minimized carbon contamination on the PHPS side-wall surface densified by PT.

AB - Effects of the N2O plasma treatment (PT) on perhydropolysilazane spin-on-dielectric (PHPS SOD) were examined as potential inter-layer- dielectrics (ILDs) for sub-30 nm Si circuits. The spin-coated PHPS (18.5 wt.%) ILD layers converted at 650 C were integrated with the 0.18 μm Si front-end-of-the line process. A modified contact pre-cleaning scheme using N2O PT produced more uniform and stable contact chain resistances from the SOD ILDs than the case of pre-cleaning only by buffered oxide etcher. Our analysis shows that this enhancement is due to the minimized carbon contamination on the PHPS side-wall surface densified by PT.

KW - Inter-layer-dielectric

KW - NO plasma treatment

KW - Perhydropolysilazane

KW - Spin-on-dielectric

UR - https://www.scopus.com/pages/publications/84891735740

U2 - 10.1016/j.tsf.2013.11.104

DO - 10.1016/j.tsf.2013.11.104

M3 - Article

AN - SCOPUS:84891735740

SN - 0040-6090

VL - 551

SP - 57

EP - 60

JO - Thin Solid Films

JF - Thin Solid Films