Effects of oxide electron transport layer on quantum dots light emitting diode with an organic/inorganic hybrid structure

Jiwan Kim; Yu Jin Park; Yohan Kim; Yong Hoon Kim; Chul Jong Han; Jeong In Han; Min Suk Oh

doi:10.1007/s13391-013-6008-4

Effects of oxide electron transport layer on quantum dots light emitting diode with an organic/inorganic hybrid structure

Jiwan Kim
, Yu Jin Park
, Yohan Kim
, Yong Hoon Kim
, Chul Jong Han
, Jeong In Han
, Min Suk Oh

Department of Chemical and Biochemical Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report on the effects of an oxide semiconductor as an electron transport layer (ETL) on a quantum dots light emitting diode (QD-LED). To improve the properties of QD-LED, we optimized the process parameters for the deposition and post-annealing steps of an oxide ETL. When zinc tin oxide (ZTO) was deposited by radio-frequency magnetron sputtering in a gas mixture of argon and oxygen (Ar: O₂ = 2: 1) and then annealed under 760 Torr O₂ for 10 min, our QD-LED showed improved luminescence characteristics. Additionally, to overcome the problem of non-uniform luminescence, we optimized the concentration and process conditions of colloidal quantum dot materials. Finally, we fabricated QD-LED devices with luminescence of 4,874 cd/m² and luminous efficiency of 2.68 cd/A.

Original language	English
Pages (from-to)	779-782
Number of pages	4
Journal	Electronic Materials Letters
Volume	9
Issue number	6
DOIs	https://doi.org/10.1007/s13391-013-6008-4
State	Published - Nov 2013

Keywords

hybrid structure
light emitting diode
quantum dots
zinc tin oxide

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10.1007/s13391-013-6008-4

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title = "Effects of oxide electron transport layer on quantum dots light emitting diode with an organic/inorganic hybrid structure",

abstract = "We report on the effects of an oxide semiconductor as an electron transport layer (ETL) on a quantum dots light emitting diode (QD-LED). To improve the properties of QD-LED, we optimized the process parameters for the deposition and post-annealing steps of an oxide ETL. When zinc tin oxide (ZTO) was deposited by radio-frequency magnetron sputtering in a gas mixture of argon and oxygen (Ar: O2 = 2: 1) and then annealed under 760 Torr O2 for 10 min, our QD-LED showed improved luminescence characteristics. Additionally, to overcome the problem of non-uniform luminescence, we optimized the concentration and process conditions of colloidal quantum dot materials. Finally, we fabricated QD-LED devices with luminescence of 4,874 cd/m2 and luminous efficiency of 2.68 cd/A.",

keywords = "hybrid structure, light emitting diode, quantum dots, zinc tin oxide",

author = "Jiwan Kim and Park, \{Yu Jin\} and Yohan Kim and Kim, \{Yong Hoon\} and Han, \{Chul Jong\} and Han, \{Jeong In\} and Oh, \{Min Suk\}",

year = "2013",

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doi = "10.1007/s13391-013-6008-4",

language = "English",

volume = "9",

pages = "779--782",

journal = "Electronic Materials Letters",

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T1 - Effects of oxide electron transport layer on quantum dots light emitting diode with an organic/inorganic hybrid structure

AU - Kim, Jiwan

AU - Park, Yu Jin

AU - Kim, Yohan

AU - Kim, Yong Hoon

AU - Han, Chul Jong

AU - Han, Jeong In

AU - Oh, Min Suk

PY - 2013/11

Y1 - 2013/11

N2 - We report on the effects of an oxide semiconductor as an electron transport layer (ETL) on a quantum dots light emitting diode (QD-LED). To improve the properties of QD-LED, we optimized the process parameters for the deposition and post-annealing steps of an oxide ETL. When zinc tin oxide (ZTO) was deposited by radio-frequency magnetron sputtering in a gas mixture of argon and oxygen (Ar: O2 = 2: 1) and then annealed under 760 Torr O2 for 10 min, our QD-LED showed improved luminescence characteristics. Additionally, to overcome the problem of non-uniform luminescence, we optimized the concentration and process conditions of colloidal quantum dot materials. Finally, we fabricated QD-LED devices with luminescence of 4,874 cd/m2 and luminous efficiency of 2.68 cd/A.

AB - We report on the effects of an oxide semiconductor as an electron transport layer (ETL) on a quantum dots light emitting diode (QD-LED). To improve the properties of QD-LED, we optimized the process parameters for the deposition and post-annealing steps of an oxide ETL. When zinc tin oxide (ZTO) was deposited by radio-frequency magnetron sputtering in a gas mixture of argon and oxygen (Ar: O2 = 2: 1) and then annealed under 760 Torr O2 for 10 min, our QD-LED showed improved luminescence characteristics. Additionally, to overcome the problem of non-uniform luminescence, we optimized the concentration and process conditions of colloidal quantum dot materials. Finally, we fabricated QD-LED devices with luminescence of 4,874 cd/m2 and luminous efficiency of 2.68 cd/A.

KW - hybrid structure

KW - light emitting diode

KW - quantum dots

KW - zinc tin oxide

UR - https://www.scopus.com/pages/publications/84887952309

U2 - 10.1007/s13391-013-6008-4

DO - 10.1007/s13391-013-6008-4

M3 - Article

AN - SCOPUS:84887952309

SN - 1738-8090

VL - 9

SP - 779

EP - 782

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 6

ER -

Effects of oxide electron transport layer on quantum dots light emitting diode with an organic/inorganic hybrid structure

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Keywords

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