Effects of oxygen precursor on resistive switching properties of cmos compatible hfo2-based rram

Hojeong Ryu, Sungjun Kim

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

In this work, we investigate the resistive switching behaviors of HfO2-based resistive ran-dom-access memory (RRAM) in two different oxidants (H2O and O3) in an atomic layer deposition system. Firstly, the surface characteristics of the Ni/HfO2/Si stack are conducted by atomic force microscopy (AFM). A similar thickness is confirmed by scanning electron microscope (SEM) imag-ing. The surface roughness of the HfO2 film by O3 (O3 sample) is smoother than in the sample by H2O (H2O sample). Next, we conduct electrical characteristics by current–voltage (I–V) and capaci-tor–voltage (C–V) curves in an initial process. The forming voltage of the H2O sample is smaller than that of the O3 sample because the H2O sample incorporates a lot of H+ in the film. Additionally, the smaller capacitor value of the H2O sample is obtained due to the higher interface trap in H2O sample. Finally, we compare the resistive switching behaviors of both samples by DC sweep. The H2O sample has more increased endurance, with a smaller on/off ratio than the O3 sample. Both have good non-volatile properties, which is verified by the retention test.

Original languageEnglish
Article number1350
JournalMetals
Volume11
Issue number9
DOIs
StatePublished - Sep 2021

Keywords

  • Atomic layer deposition
  • HfO2
  • Memristor
  • Metal oxides
  • Resistive switching

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