Effects of oxygen precursor on resistive switching properties of cmos compatible hfo2-based rram

Material Science

• Film 100%
• Scanning Electron Microscopy 50%
• Capacitor 50%
• Electrical Property 50%
• Surface Roughness 50%
• Oxidant 50%
• Surface Property 50%

Engineering

• Resistive 100%
• Atomic Force Microscopy 25%
• Atomic Layer Deposition 25%
• Scanning Electron Microscope 25%
• Interface Trap 25%
• Deposition System 25%

Physics

• Resistive Switching 100%
• Atomic Force Microscopy 33%
• Electron Microscope 33%
• Surface Roughness 33%