Effects of oxygen stoichiometry on resistive switching properties in amorphous tungsten oxide films

B. U. Jang, A. I. Inamdar, Jongmin Kim, Woong Jung, Hyunsik Im, Hyungsang Kim, J. P. Hong

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The bipolar resistance switching in WO 3 + δ films sandwiched by Al and Pt electrodes was investigated by changing additional oxygen content (δ). Reliable switching voltages and retention were observed for all samples. As δ increases the bi-stable current-voltage characteristics fluctuate leading to unstable switching power consumption. An analysis of the temperature dependence of the bi-stable resistance states revealed additional features that thermionic emission and metallic conduction co-contribute to the electrical transport of the resistance states. The authors propose that the observed resistance switching is due to the combined effects of potential modification near the interface and the formation of a metallic channel.

Original languageEnglish
Pages (from-to)5451-5454
Number of pages4
JournalThin Solid Films
Volume520
Issue number16
DOIs
StatePublished - 1 Jun 2012

Keywords

  • Resistive switching
  • Sputtering
  • Tungsten oxide

Fingerprint

Dive into the research topics of 'Effects of oxygen stoichiometry on resistive switching properties in amorphous tungsten oxide films'. Together they form a unique fingerprint.

Cite this