Abstract
In this work, the effect of Ge point defect healing process between 550 °C and 650 °C is investigated, in the aspect of leakage (off) current and junction depth of Ge n+/p junction diodes using ECV, TEM, J-V, and SIMS analyses. After 600 °C anneal, off-current density (2 × 10-4 A/cm2) is dramatically reduced due to the defect healing phenomenon that decreases the number of point defects, subsequently providing a higher on/off-current ratio of 5 × 103. In spite of the high healing temperature, junction diodes seem not to suffer from the deep diffusion of phosphorus (P) in Ge because those diffuse mostly through V Ge. In addition, it is also confirmed that Ti is an appropriate material in terms of diffusion barrier and diffusivity for Ge n+/p junction contact metal.
Original language | English |
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Article number | 094515 |
Journal | Journal of Applied Physics |
Volume | 114 |
Issue number | 9 |
DOIs | |
State | Published - 7 Sep 2013 |