Effects of surface recombination on exciton dynamics in GaN nanorods

Y. S. Park; T. W. Kang; H. Im; S. K. Lee; Y. H. Cho; C. M. Park; M. S. Han; R. A. Taylor

doi:10.1166/jno.2009.1044

Effects of surface recombination on exciton dynamics in GaN nanorods

Y. S. Park, T. W. Kang, H. Im, S. K. Lee, Y. H. Cho, C. M. Park, M. S. Han, R. A. Taylor

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have investigated the optical properties of GaN nanorods with different diameters by microphotoluminescence (PL) and time-resolved PL measurements grown on (111) Si substrates by using radio-frequency plasma-assisted molecular-beam epitaxy. In order to confirm the formation of the GaN nanorods and their physical dimension, we employed high resolution scanning electron microscopy. As the diameters of the nanorods decreased, the donor bound exciton (D ⁰X) emission, which is mainly observed at low temperature for samples with larger diameters, rapidly quenched compared with the free exciton (FX). The activation energy of the FX for GaN nanorods with different diameters was also evaluated. The decay times are a few tens of ps for both the D⁰X and the FX transitions. The overall decay times decrease linearly with decreasing average diameter of the nanorods. Time-resolved PL studies show that surface recombination is dominant in determining the excitonic dynamics.

Original language	English
Pages (from-to)	307-311
Number of pages	5
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	4
Issue number	3
DOIs	https://doi.org/10.1166/jno.2009.1044
State	Published - Dec 2009

Keywords

GaN
Micro-Photoluminescence
Nanorods

Access to Document

10.1166/jno.2009.1044

Cite this

@article{fb79bd5742ff4bf0b58190b178cdcee9,

title = "Effects of surface recombination on exciton dynamics in GaN nanorods",

abstract = "We have investigated the optical properties of GaN nanorods with different diameters by microphotoluminescence (PL) and time-resolved PL measurements grown on (111) Si substrates by using radio-frequency plasma-assisted molecular-beam epitaxy. In order to confirm the formation of the GaN nanorods and their physical dimension, we employed high resolution scanning electron microscopy. As the diameters of the nanorods decreased, the donor bound exciton (D 0X) emission, which is mainly observed at low temperature for samples with larger diameters, rapidly quenched compared with the free exciton (FX). The activation energy of the FX for GaN nanorods with different diameters was also evaluated. The decay times are a few tens of ps for both the D0X and the FX transitions. The overall decay times decrease linearly with decreasing average diameter of the nanorods. Time-resolved PL studies show that surface recombination is dominant in determining the excitonic dynamics.",

keywords = "GaN, Micro-Photoluminescence, Nanorods",

author = "Park, {Y. S.} and Kang, {T. W.} and H. Im and Lee, {S. K.} and Cho, {Y. H.} and Park, {C. M.} and Han, {M. S.} and Taylor, {R. A.}",

year = "2009",

month = dec,

doi = "10.1166/jno.2009.1044",

language = "English",

volume = "4",

pages = "307--311",

journal = "Journal of Nanoelectronics and Optoelectronics",

issn = "1555-130X",

publisher = "American Scientific Publishers",

number = "3",

}

TY - JOUR

T1 - Effects of surface recombination on exciton dynamics in GaN nanorods

AU - Park, Y. S.

AU - Kang, T. W.

AU - Im, H.

AU - Lee, S. K.

AU - Cho, Y. H.

AU - Park, C. M.

AU - Han, M. S.

AU - Taylor, R. A.

PY - 2009/12

Y1 - 2009/12

N2 - We have investigated the optical properties of GaN nanorods with different diameters by microphotoluminescence (PL) and time-resolved PL measurements grown on (111) Si substrates by using radio-frequency plasma-assisted molecular-beam epitaxy. In order to confirm the formation of the GaN nanorods and their physical dimension, we employed high resolution scanning electron microscopy. As the diameters of the nanorods decreased, the donor bound exciton (D 0X) emission, which is mainly observed at low temperature for samples with larger diameters, rapidly quenched compared with the free exciton (FX). The activation energy of the FX for GaN nanorods with different diameters was also evaluated. The decay times are a few tens of ps for both the D0X and the FX transitions. The overall decay times decrease linearly with decreasing average diameter of the nanorods. Time-resolved PL studies show that surface recombination is dominant in determining the excitonic dynamics.

AB - We have investigated the optical properties of GaN nanorods with different diameters by microphotoluminescence (PL) and time-resolved PL measurements grown on (111) Si substrates by using radio-frequency plasma-assisted molecular-beam epitaxy. In order to confirm the formation of the GaN nanorods and their physical dimension, we employed high resolution scanning electron microscopy. As the diameters of the nanorods decreased, the donor bound exciton (D 0X) emission, which is mainly observed at low temperature for samples with larger diameters, rapidly quenched compared with the free exciton (FX). The activation energy of the FX for GaN nanorods with different diameters was also evaluated. The decay times are a few tens of ps for both the D0X and the FX transitions. The overall decay times decrease linearly with decreasing average diameter of the nanorods. Time-resolved PL studies show that surface recombination is dominant in determining the excitonic dynamics.

KW - GaN

KW - Micro-Photoluminescence

KW - Nanorods

UR - http://www.scopus.com/inward/record.url?scp=77952694740&partnerID=8YFLogxK

U2 - 10.1166/jno.2009.1044

DO - 10.1166/jno.2009.1044

M3 - Article

AN - SCOPUS:77952694740

SN - 1555-130X

VL - 4

SP - 307

EP - 311

JO - Journal of Nanoelectronics and Optoelectronics

JF - Journal of Nanoelectronics and Optoelectronics

IS - 3

ER -

Effects of surface recombination on exciton dynamics in GaN nanorods

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this