Effects of the gate recess structure on the DC electrical behavior of 0.1-μm metamorphic high-electron-mobility transistors
- Jung Hun Oh
- , Myung Sik Son
- , Bok Hyung Lee
- , Yong Hyun Baek
- , Hae Kang Jang
- , Jin Koo Rhee
- , In Seok Hwang
- , Sam Dong Kim
- Dongguk University
Research output: Contribution to journal › Article › peer-review
6
Scopus
citations