Abstract
We examined the effects of the silicon nitride (Si3N 4) passivations on the electrical characteristics of 0.1 μm pseudomorphic high electron mobility transistors (pHEMTs). DC and RF characteristics are investigated before and after the Si3N 4 passivations. After the Si3N4 passivation, we observed significant degradation of ft and noise performance and clear increases in drain-source saturation current and extrinsic transconductance with no significant variation in pinch-off voltage. We propose that these variations in DC and noise characteristics are due to the positively charged surface state after deposition of the Si3N4 passivation. Also the degradation of RF performance is associated with the increase of gate-source and gate drain capacitance due to the high dielectric constant of the Si3N4 The hydrodynamic device model simulation is performed based on the proposed mechanisms for the change in electrical behavior, and the calculation results show a good agreement with the experimental result.
Original language | English |
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Pages | 111-118 |
Number of pages | 8 |
State | Published - 2004 |
Event | State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: 9 May 2004 → 14 May 2004 |
Conference
Conference | State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium |
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Country/Territory | United States |
City | San Antonio, TX |
Period | 9/05/04 → 14/05/04 |