Effects of the silicon nitride passivation on the DC and RF performance of 0.1 μm pseudomorphic hemts

Jung Hun Oh, Woo Suk Sul, Hyo Jong Han, Myung Sik Son, Jin Koo Rhee, Sam Dong Kim

Research output: Contribution to conferencePaperpeer-review

Abstract

We examined the effects of the silicon nitride (Si3N 4) passivations on the electrical characteristics of 0.1 μm pseudomorphic high electron mobility transistors (pHEMTs). DC and RF characteristics are investigated before and after the Si3N 4 passivations. After the Si3N4 passivation, we observed significant degradation of ft and noise performance and clear increases in drain-source saturation current and extrinsic transconductance with no significant variation in pinch-off voltage. We propose that these variations in DC and noise characteristics are due to the positively charged surface state after deposition of the Si3N4 passivation. Also the degradation of RF performance is associated with the increase of gate-source and gate drain capacitance due to the high dielectric constant of the Si3N4 The hydrodynamic device model simulation is performed based on the proposed mechanisms for the change in electrical behavior, and the calculation results show a good agreement with the experimental result.

Original languageEnglish
Pages111-118
Number of pages8
StatePublished - 2004
EventState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: 9 May 200414 May 2004

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
Country/TerritoryUnited States
CitySan Antonio, TX
Period9/05/0414/05/04

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