Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers

Sejoon Lee; Youngmin Lee; Deuk Young Kim; Tae Won Kang

doi:10.1063/1.4817765

Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers

Sejoon Lee, Youngmin Lee, Deuk Young Kim, Tae Won Kang

Division of System Semiconductor

Dongguk University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We investigate the effects of Ti-codoping on the structural and electrical properties of the ZnCrTiO layers grown on the Pt (111)/Ti/Al₂O ₃ (0001) substrates by co-sputtering of ZnCrO and Ti. The ZnCrTiO layers with the Ti contents of 0.2-0.3 at. % reveal the enhanced disorder-activated Raman modes, attributing to increased lattice-displacement- induced phonon scattering due to the incorporation of Ti additives. In comparison with ZnCrO, the ZnCrTiO layers exhibit the improved ferroelectric properties with one order of magnitude-increased remnant polarization. This causes a polarization-dependent asymmetric hysteresis behavior in the Pt/ZnCrTiO/Pt top-to-bottom metal-ferroelectric-metal device, suggesting potential applications for two-terminal ferroelectric-tunneling resistive memories.

Original language	English
Article number	064102
Journal	Journal of Applied Physics
Volume	114
Issue number	6
DOIs	https://doi.org/10.1063/1.4817765
State	Published - 14 Aug 2013

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@article{7cee3bb0fb9d4726957da8eb75820fd6,

title = "Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers",

abstract = "We investigate the effects of Ti-codoping on the structural and electrical properties of the ZnCrTiO layers grown on the Pt (111)/Ti/Al2O 3 (0001) substrates by co-sputtering of ZnCrO and Ti. The ZnCrTiO layers with the Ti contents of 0.2-0.3 at. % reveal the enhanced disorder-activated Raman modes, attributing to increased lattice-displacement- induced phonon scattering due to the incorporation of Ti additives. In comparison with ZnCrO, the ZnCrTiO layers exhibit the improved ferroelectric properties with one order of magnitude-increased remnant polarization. This causes a polarization-dependent asymmetric hysteresis behavior in the Pt/ZnCrTiO/Pt top-to-bottom metal-ferroelectric-metal device, suggesting potential applications for two-terminal ferroelectric-tunneling resistive memories.",

author = "Sejoon Lee and Youngmin Lee and {Young Kim}, Deuk and {Won Kang}, Tae",

year = "2013",

month = aug,

day = "14",

doi = "10.1063/1.4817765",

language = "English",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers

AU - Lee, Sejoon

AU - Lee, Youngmin

AU - Young Kim, Deuk

AU - Won Kang, Tae

PY - 2013/8/14

Y1 - 2013/8/14

N2 - We investigate the effects of Ti-codoping on the structural and electrical properties of the ZnCrTiO layers grown on the Pt (111)/Ti/Al2O 3 (0001) substrates by co-sputtering of ZnCrO and Ti. The ZnCrTiO layers with the Ti contents of 0.2-0.3 at. % reveal the enhanced disorder-activated Raman modes, attributing to increased lattice-displacement- induced phonon scattering due to the incorporation of Ti additives. In comparison with ZnCrO, the ZnCrTiO layers exhibit the improved ferroelectric properties with one order of magnitude-increased remnant polarization. This causes a polarization-dependent asymmetric hysteresis behavior in the Pt/ZnCrTiO/Pt top-to-bottom metal-ferroelectric-metal device, suggesting potential applications for two-terminal ferroelectric-tunneling resistive memories.

AB - We investigate the effects of Ti-codoping on the structural and electrical properties of the ZnCrTiO layers grown on the Pt (111)/Ti/Al2O 3 (0001) substrates by co-sputtering of ZnCrO and Ti. The ZnCrTiO layers with the Ti contents of 0.2-0.3 at. % reveal the enhanced disorder-activated Raman modes, attributing to increased lattice-displacement- induced phonon scattering due to the incorporation of Ti additives. In comparison with ZnCrO, the ZnCrTiO layers exhibit the improved ferroelectric properties with one order of magnitude-increased remnant polarization. This causes a polarization-dependent asymmetric hysteresis behavior in the Pt/ZnCrTiO/Pt top-to-bottom metal-ferroelectric-metal device, suggesting potential applications for two-terminal ferroelectric-tunneling resistive memories.

UR - http://www.scopus.com/inward/record.url?scp=84883366304&partnerID=8YFLogxK

U2 - 10.1063/1.4817765

DO - 10.1063/1.4817765

M3 - Article

AN - SCOPUS:84883366304

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 064102

ER -

Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers

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