Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers

Sejoon Lee; Youngmin Lee; Deuk Young Kim; Tae Won Kang

doi:10.1063/1.4817765

Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers

Sejoon Lee
, Youngmin Lee
, Deuk Young Kim
, Tae Won Kang

Division of System Semiconductor

Dongguk University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We investigate the effects of Ti-codoping on the structural and electrical properties of the ZnCrTiO layers grown on the Pt (111)/Ti/Al₂O ₃ (0001) substrates by co-sputtering of ZnCrO and Ti. The ZnCrTiO layers with the Ti contents of 0.2-0.3 at. % reveal the enhanced disorder-activated Raman modes, attributing to increased lattice-displacement- induced phonon scattering due to the incorporation of Ti additives. In comparison with ZnCrO, the ZnCrTiO layers exhibit the improved ferroelectric properties with one order of magnitude-increased remnant polarization. This causes a polarization-dependent asymmetric hysteresis behavior in the Pt/ZnCrTiO/Pt top-to-bottom metal-ferroelectric-metal device, suggesting potential applications for two-terminal ferroelectric-tunneling resistive memories.

Original language	English
Article number	064102
Journal	Journal of Applied Physics
Volume	114
Issue number	6
DOIs	https://doi.org/10.1063/1.4817765
State	Published - 14 Aug 2013

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title = "Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers",

abstract = "We investigate the effects of Ti-codoping on the structural and electrical properties of the ZnCrTiO layers grown on the Pt (111)/Ti/Al2O 3 (0001) substrates by co-sputtering of ZnCrO and Ti. The ZnCrTiO layers with the Ti contents of 0.2-0.3 at. \% reveal the enhanced disorder-activated Raman modes, attributing to increased lattice-displacement- induced phonon scattering due to the incorporation of Ti additives. In comparison with ZnCrO, the ZnCrTiO layers exhibit the improved ferroelectric properties with one order of magnitude-increased remnant polarization. This causes a polarization-dependent asymmetric hysteresis behavior in the Pt/ZnCrTiO/Pt top-to-bottom metal-ferroelectric-metal device, suggesting potential applications for two-terminal ferroelectric-tunneling resistive memories.",

author = "Sejoon Lee and Youngmin Lee and \{Young Kim\}, Deuk and \{Won Kang\}, Tae",

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T1 - Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers

AU - Lee, Sejoon

AU - Lee, Youngmin

AU - Young Kim, Deuk

AU - Won Kang, Tae

PY - 2013/8/14

Y1 - 2013/8/14

N2 - We investigate the effects of Ti-codoping on the structural and electrical properties of the ZnCrTiO layers grown on the Pt (111)/Ti/Al2O 3 (0001) substrates by co-sputtering of ZnCrO and Ti. The ZnCrTiO layers with the Ti contents of 0.2-0.3 at. % reveal the enhanced disorder-activated Raman modes, attributing to increased lattice-displacement- induced phonon scattering due to the incorporation of Ti additives. In comparison with ZnCrO, the ZnCrTiO layers exhibit the improved ferroelectric properties with one order of magnitude-increased remnant polarization. This causes a polarization-dependent asymmetric hysteresis behavior in the Pt/ZnCrTiO/Pt top-to-bottom metal-ferroelectric-metal device, suggesting potential applications for two-terminal ferroelectric-tunneling resistive memories.

AB - We investigate the effects of Ti-codoping on the structural and electrical properties of the ZnCrTiO layers grown on the Pt (111)/Ti/Al2O 3 (0001) substrates by co-sputtering of ZnCrO and Ti. The ZnCrTiO layers with the Ti contents of 0.2-0.3 at. % reveal the enhanced disorder-activated Raman modes, attributing to increased lattice-displacement- induced phonon scattering due to the incorporation of Ti additives. In comparison with ZnCrO, the ZnCrTiO layers exhibit the improved ferroelectric properties with one order of magnitude-increased remnant polarization. This causes a polarization-dependent asymmetric hysteresis behavior in the Pt/ZnCrTiO/Pt top-to-bottom metal-ferroelectric-metal device, suggesting potential applications for two-terminal ferroelectric-tunneling resistive memories.

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U2 - 10.1063/1.4817765

DO - 10.1063/1.4817765

M3 - Article

AN - SCOPUS:84883366304

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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M1 - 064102

ER -

Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers

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