TY - JOUR
T1 - Effects of Ti Doping on the Electrical Properties and Gate-Bias Stability of Amorphous Zinc-Tin-Oxide Thin-Film Transistors
AU - Park, Sunghyun
AU - Park, Boyeon
AU - Jeon, Seoung Pil
AU - Kang, Youngjin
AU - Kim, Jaehyun
AU - Park, Sung Kyu
AU - Kim, Yong Hoon
N1 - Publisher Copyright:
© 2023 American Chemical Society
PY - 2023/6/27
Y1 - 2023/6/27
N2 - Multicationic oxide semiconductors are receiving considerable interest in electronic and optoelectronic devices owing to their tunability of physical properties by the cation compositions. Here, we investigated the effects of Ti doping on the electrical properties and gate-bias stability of amorphous zinc-tin-oxide (a-ZnSnO, Zn/Sn = 7:3) thin-film transistors (TFTs) using a cosputtering process. Particularly, by using cosputtering, controllable doping of Ti in a-ZnSnO films was possible in the range of 0.87-3.87 atom %. From various electrical analyses, it was found that the key metrics of Ti-doped ZnSnO (TiZnSnO) TFTs, such as field-effect mobility and gate-bias stability, were highly dependent on the Ti concentration, showing a mobility-stability tradeoff. Based on X-ray photoelectron spectroscopy analysis, the mobility-stability tradeoff is ascribed to the suppression of oxygen vacancy formation by Ti doping. Considering the overall electrical performance and stability of TiZnSnO TFTs, which were processed at 450 °C, the optimal Ti concentration was determined as ∼1.14 atom % with Zn, Sn, and O concentrations of 15.87, 22.92, and 60.07 atom %, respectively. The device exhibited a field-effect mobility of 8.2 cm2 V-1 s-1, a subthreshold slope of 0.208 V decade-1, an on/off ratio of 3.38 × 108, a hysteresis of 2.8 V, and a threshold voltage shift of +5.61 and −2.24 V under positive- and negative-bias stresses, respectively.
AB - Multicationic oxide semiconductors are receiving considerable interest in electronic and optoelectronic devices owing to their tunability of physical properties by the cation compositions. Here, we investigated the effects of Ti doping on the electrical properties and gate-bias stability of amorphous zinc-tin-oxide (a-ZnSnO, Zn/Sn = 7:3) thin-film transistors (TFTs) using a cosputtering process. Particularly, by using cosputtering, controllable doping of Ti in a-ZnSnO films was possible in the range of 0.87-3.87 atom %. From various electrical analyses, it was found that the key metrics of Ti-doped ZnSnO (TiZnSnO) TFTs, such as field-effect mobility and gate-bias stability, were highly dependent on the Ti concentration, showing a mobility-stability tradeoff. Based on X-ray photoelectron spectroscopy analysis, the mobility-stability tradeoff is ascribed to the suppression of oxygen vacancy formation by Ti doping. Considering the overall electrical performance and stability of TiZnSnO TFTs, which were processed at 450 °C, the optimal Ti concentration was determined as ∼1.14 atom % with Zn, Sn, and O concentrations of 15.87, 22.92, and 60.07 atom %, respectively. The device exhibited a field-effect mobility of 8.2 cm2 V-1 s-1, a subthreshold slope of 0.208 V decade-1, an on/off ratio of 3.38 × 108, a hysteresis of 2.8 V, and a threshold voltage shift of +5.61 and −2.24 V under positive- and negative-bias stresses, respectively.
KW - cosputtering
KW - oxide semiconductors
KW - thin-film transistors
KW - Ti doping
KW - ZnSnO
UR - http://www.scopus.com/inward/record.url?scp=85163383315&partnerID=8YFLogxK
U2 - 10.1021/acsaelm.3c00431
DO - 10.1021/acsaelm.3c00431
M3 - Article
AN - SCOPUS:85163383315
SN - 2637-6113
VL - 5
SP - 3416
EP - 3425
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 6
ER -