Effects of Ti incorporation on the interface properties and band alignment of HfTaOx thin films on sulfur passivated GaAs

T. Das; C. Mahata; C. K. Maiti; E. Miranda; G. Sutradhar; P. K. Bose

doi:10.1063/1.3536520

Effects of Ti incorporation on the interface properties and band alignment of HfTaO_x thin films on sulfur passivated GaAs

T. Das, C. Mahata, C. K. Maiti, E. Miranda, G. Sutradhar, P. K. Bose

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Thin HfTaO_x and HfTaTiO_x gate dielectrics (∼7-8 nm) have been rf sputter-deposited on sulfur passivated GaAs. Our experimental results suggest that the formation of Ga-O at GaAs surface and As diffusion in dielectric may be effectively controlled by Ti incorporation. Possibility of tailoring of band alignment via Ti incorporation is shown. Valence band offsets of 2.6 ± 0.05 and 2.68 ±0.05 eV and conduction-band offsets of 1.43 ±0.05 and 1.05 ±0.05 eV were found for HfTaO_x (E_g∼5.45 eV) and HfTaTiO_x (E_g∼5.15 eV), respectively. 7copy; 2011 American Institute of Physics.

Original language	English
Article number	022901
Journal	Applied Physics Letters
Volume	98
Issue number	2
DOIs	https://doi.org/10.1063/1.3536520
State	Published - 10 Jan 2011

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abstract = "Thin HfTaOx and HfTaTiOx gate dielectrics (∼7-8 nm) have been rf sputter-deposited on sulfur passivated GaAs. Our experimental results suggest that the formation of Ga-O at GaAs surface and As diffusion in dielectric may be effectively controlled by Ti incorporation. Possibility of tailoring of band alignment via Ti incorporation is shown. Valence band offsets of 2.6 ± 0.05 and 2.68 ±0.05 eV and conduction-band offsets of 1.43 ±0.05 and 1.05 ±0.05 eV were found for HfTaOx (Eg∼5.45 eV) and HfTaTiOx (Eg∼5.15 eV), respectively. 7copy; 2011 American Institute of Physics.",

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T1 - Effects of Ti incorporation on the interface properties and band alignment of HfTaOx thin films on sulfur passivated GaAs

AU - Das, T.

AU - Mahata, C.

AU - Maiti, C. K.

AU - Miranda, E.

AU - Sutradhar, G.

AU - Bose, P. K.

PY - 2011/1/10

Y1 - 2011/1/10

N2 - Thin HfTaOx and HfTaTiOx gate dielectrics (∼7-8 nm) have been rf sputter-deposited on sulfur passivated GaAs. Our experimental results suggest that the formation of Ga-O at GaAs surface and As diffusion in dielectric may be effectively controlled by Ti incorporation. Possibility of tailoring of band alignment via Ti incorporation is shown. Valence band offsets of 2.6 ± 0.05 and 2.68 ±0.05 eV and conduction-band offsets of 1.43 ±0.05 and 1.05 ±0.05 eV were found for HfTaOx (Eg∼5.45 eV) and HfTaTiOx (Eg∼5.15 eV), respectively. 7copy; 2011 American Institute of Physics.

AB - Thin HfTaOx and HfTaTiOx gate dielectrics (∼7-8 nm) have been rf sputter-deposited on sulfur passivated GaAs. Our experimental results suggest that the formation of Ga-O at GaAs surface and As diffusion in dielectric may be effectively controlled by Ti incorporation. Possibility of tailoring of band alignment via Ti incorporation is shown. Valence band offsets of 2.6 ± 0.05 and 2.68 ±0.05 eV and conduction-band offsets of 1.43 ±0.05 and 1.05 ±0.05 eV were found for HfTaOx (Eg∼5.45 eV) and HfTaTiOx (Eg∼5.15 eV), respectively. 7copy; 2011 American Institute of Physics.

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Effects of Ti incorporation on the interface properties and band alignment of HfTaO_x thin films on sulfur passivated GaAs

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