Abstract
The effects of GE PAM on C54 Ti silicidation on bar line resistance and various junction characteristics of ∼0.25 μm salicide transistor structures were studied in comparison with As PAM. Ge PAM produced more Ti silicidation than As PAM and a strong (040) C54 preferred orientation at n+ junctions after a second RTA.
Original language | English |
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Pages (from-to) | 1195-1200 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 19 |
Issue number | 4 |
DOIs | |
State | Published - Jul 2001 |
Event | 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: 15 Oct 2000 → 18 Oct 2000 |