Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide

Sam Dong Kim, Hyun Chang Park, In Seok Hwang, Jin Koo Rhee, Dae Gyu Park

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

The effects of GE PAM on C54 Ti silicidation on bar line resistance and various junction characteristics of ∼0.25 μm salicide transistor structures were studied in comparison with As PAM. Ge PAM produced more Ti silicidation than As PAM and a strong (040) C54 preferred orientation at n+ junctions after a second RTA.

Original languageEnglish
Pages (from-to)1195-1200
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number4
DOIs
StatePublished - Jul 2001
Event19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
Duration: 15 Oct 200018 Oct 2000

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