Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide

Sam Dong Kim; Hyun Chang Park; In Seok Hwang; Jin Koo Rhee; Dae Gyu Park

doi:10.1116/1.1385686

Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide

Sam Dong Kim
, Hyun Chang Park
, In Seok Hwang
, Jin Koo Rhee
, Dae Gyu Park

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The effects of GE PAM on C54 Ti silicidation on bar line resistance and various junction characteristics of ∼0.25 μm salicide transistor structures were studied in comparison with As PAM. Ge PAM produced more Ti silicidation than As PAM and a strong (040) C54 preferred orientation at n+ junctions after a second RTA.

Original language	English
Pages (from-to)	1195-1200
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1385686
State	Published - Jul 2001
Event	19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: 15 Oct 2000 → 18 Oct 2000

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10.1116/1.1385686

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@article{48eb4f00d92a4a339ce391acf541c2f1,

title = "Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide",

abstract = "The effects of GE PAM on C54 Ti silicidation on bar line resistance and various junction characteristics of ∼0.25 μm salicide transistor structures were studied in comparison with As PAM. Ge PAM produced more Ti silicidation than As PAM and a strong (040) C54 preferred orientation at n+ junctions after a second RTA.",

author = "Kim, \{Sam Dong\} and Park, \{Hyun Chang\} and Hwang, \{In Seok\} and Rhee, \{Jin Koo\} and Park, \{Dae Gyu\}",

year = "2001",

month = jul,

doi = "10.1116/1.1385686",

language = "English",

volume = "19",

pages = "1195--1200",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

note = "19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) ; Conference date: 15-10-2000 Through 18-10-2000",

}

Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide. / Kim, Sam Dong ; Park, Hyun Chang; Hwang, In Seok et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 4, 07.2001, p. 1195-1200.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide

AU - Kim, Sam Dong

AU - Park, Hyun Chang

AU - Hwang, In Seok

AU - Rhee, Jin Koo

AU - Park, Dae Gyu

PY - 2001/7

Y1 - 2001/7

N2 - The effects of GE PAM on C54 Ti silicidation on bar line resistance and various junction characteristics of ∼0.25 μm salicide transistor structures were studied in comparison with As PAM. Ge PAM produced more Ti silicidation than As PAM and a strong (040) C54 preferred orientation at n+ junctions after a second RTA.

AB - The effects of GE PAM on C54 Ti silicidation on bar line resistance and various junction characteristics of ∼0.25 μm salicide transistor structures were studied in comparison with As PAM. Ge PAM produced more Ti silicidation than As PAM and a strong (040) C54 preferred orientation at n+ junctions after a second RTA.

UR - https://www.scopus.com/pages/publications/0035535248

U2 - 10.1116/1.1385686

DO - 10.1116/1.1385686

M3 - Conference article

AN - SCOPUS:0035535248

SN - 1071-1023

VL - 19

SP - 1195

EP - 1200

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19)

Y2 - 15 October 2000 through 18 October 2000

ER -

Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide

Abstract

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