Electrical and optical properties of polymer field-effect transistors fabricated on a paper-based flexible substrate

Jae Yong Seong; Kwan Soo Chung; Yong Hoon Kim; Dae Gyu Moon; Jeong In Han; Won Keun Kim

Electrical and optical properties of polymer field-effect transistors fabricated on a paper-based flexible substrate

Jae Yong Seong, Kwan Soo Chung, Yong Hoon Kim, Dae Gyu Moon, Jeong In Han, Won Keun Kim

Department of Chemical and Biochemical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, we demonstrate polymer field-effect transistors (FETs) on a paper-based flexible substrate. As a substrate, commercially available photo-paper is used with parylene coating. The parylene layer enables conventionally used wet chemical process and vacuum deposition processes for electrodes and gate insulator. As an active channel layer, we used poly-3-hexylthiophene (P3HT) which is solution processable. Field effect mobility up to 0.06 cm²/V·s and on/off ratio of 10 ² - 10³ are achieved on a photo-paper.

Original language	English
Pages	170-175
Number of pages	6
State	Published - 2004
Event	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: 9 May 2004 → 14 May 2004

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
Country/Territory	United States
City	San Antonio, TX
Period	9/05/04 → 14/05/04

Cite this

Seong, J. Y., Chung, K. S., Kim, Y. H., Moon, D. G., Han, J. I., & Kim, W. K. (2004). Electrical and optical properties of polymer field-effect transistors fabricated on a paper-based flexible substrate. 170-175. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Seong, Jae Yong ; Chung, Kwan Soo ; Kim, Yong Hoon et al. / Electrical and optical properties of polymer field-effect transistors fabricated on a paper-based flexible substrate. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.6 p.

@conference{e142d198d0ce4ced866d38b57ad5814e,

title = "Electrical and optical properties of polymer field-effect transistors fabricated on a paper-based flexible substrate",

abstract = "In this paper, we demonstrate polymer field-effect transistors (FETs) on a paper-based flexible substrate. As a substrate, commercially available photo-paper is used with parylene coating. The parylene layer enables conventionally used wet chemical process and vacuum deposition processes for electrodes and gate insulator. As an active channel layer, we used poly-3-hexylthiophene (P3HT) which is solution processable. Field effect mobility up to 0.06 cm2/V·s and on/off ratio of 10 2 - 103 are achieved on a photo-paper.",

author = "Seong, {Jae Yong} and Chung, {Kwan Soo} and Kim, {Yong Hoon} and Moon, {Dae Gyu} and Han, {Jeong In} and Kim, {Won Keun}",

year = "2004",

language = "English",

pages = "170--175",

note = "State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium ; Conference date: 09-05-2004 Through 14-05-2004",

}

Seong, JY, Chung, KS, Kim, YH, Moon, DG, Han, JI & Kim, WK 2004, 'Electrical and optical properties of polymer field-effect transistors fabricated on a paper-based flexible substrate', Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States, 9/05/04 - 14/05/04 pp. 170-175.

Electrical and optical properties of polymer field-effect transistors fabricated on a paper-based flexible substrate. / Seong, Jae Yong; Chung, Kwan Soo; Kim, Yong Hoon et al.
2004. 170-175 Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Research output: Contribution to conference › Paper › peer-review

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T1 - Electrical and optical properties of polymer field-effect transistors fabricated on a paper-based flexible substrate

AU - Seong, Jae Yong

AU - Chung, Kwan Soo

AU - Kim, Yong Hoon

AU - Moon, Dae Gyu

AU - Han, Jeong In

AU - Kim, Won Keun

PY - 2004

Y1 - 2004

N2 - In this paper, we demonstrate polymer field-effect transistors (FETs) on a paper-based flexible substrate. As a substrate, commercially available photo-paper is used with parylene coating. The parylene layer enables conventionally used wet chemical process and vacuum deposition processes for electrodes and gate insulator. As an active channel layer, we used poly-3-hexylthiophene (P3HT) which is solution processable. Field effect mobility up to 0.06 cm2/V·s and on/off ratio of 10 2 - 103 are achieved on a photo-paper.

AB - In this paper, we demonstrate polymer field-effect transistors (FETs) on a paper-based flexible substrate. As a substrate, commercially available photo-paper is used with parylene coating. The parylene layer enables conventionally used wet chemical process and vacuum deposition processes for electrodes and gate insulator. As an active channel layer, we used poly-3-hexylthiophene (P3HT) which is solution processable. Field effect mobility up to 0.06 cm2/V·s and on/off ratio of 10 2 - 103 are achieved on a photo-paper.

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M3 - Paper

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T2 - State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium

Y2 - 9 May 2004 through 14 May 2004

ER -

Seong JY, Chung KS, Kim YH, Moon DG, Han JI, Kim WK. Electrical and optical properties of polymer field-effect transistors fabricated on a paper-based flexible substrate. 2004. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Electrical and optical properties of polymer field-effect transistors fabricated on a paper-based flexible substrate

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