Electrical and optical properties of (Zn0.93Mn 0.07)O-based homojunction diode

Sejoon Lee, Deuk Young Kim

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A p-(Zn0.93Mn0.07)O/n-(Zn0.93Mn 0.07)O homojunction diode, which was fabricated using As+ implantation in a semi-insulating-(Zn0.93Mn0.07)O/n- (Zn0.93Mn0.07)O layer, clearly showed a rectifying behavior. The values of VT, VB and IS were 2.65 V, -8.12 V and 2.04 × 10-8 A, respectively. For the electroluminescence measurements, the diode exhibited light emission at ∼425 nm. By confirming the luminescence properties at the depletion region, we confirmed that the observed light emission originated from transitions between carriers in the donor level and in the acceptor level.

Original languageEnglish
Pages (from-to)1905-1908
Number of pages4
JournalJournal of the Korean Physical Society
Volume52
Issue number6
DOIs
StatePublished - Jun 2008

Keywords

  • Electroluminescence
  • Homojunction diode
  • Rectifying behavior
  • ZnMno

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