Abstract
A p-(Zn0.93Mn0.07)O/n-(Zn0.93Mn 0.07)O homojunction diode, which was fabricated using As+ implantation in a semi-insulating-(Zn0.93Mn0.07)O/n- (Zn0.93Mn0.07)O layer, clearly showed a rectifying behavior. The values of VT, VB and IS were 2.65 V, -8.12 V and 2.04 × 10-8 A, respectively. For the electroluminescence measurements, the diode exhibited light emission at ∼425 nm. By confirming the luminescence properties at the depletion region, we confirmed that the observed light emission originated from transitions between carriers in the donor level and in the acceptor level.
Original language | English |
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Pages (from-to) | 1905-1908 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 52 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2008 |
Keywords
- Electroluminescence
- Homojunction diode
- Rectifying behavior
- ZnMno