Abstract
We have successfully developed the high performance flexible thin film diode (FTFD) device on flexible plastic film. The symmetry and reliability of FTFD devices were estimated under various measurement conditions including severely bending states. Al FTFD had near constant electrical properties in any bending state. The device with Ti/Ta2O5/Ta structure had poor I-V characteristics curve but as it was inserted buffer layer, electrical properties was very improved and their curve was remained regardless of bending state.
Original language | English |
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Pages (from-to) | 383-385 |
Number of pages | 3 |
Journal | SID Conference Record of the International Display Research Conference |
State | Published - 2002 |
Event | 22nd International Display Research Conference - Nice, France Duration: 2 Oct 2002 → 4 Oct 2002 |