@inproceedings{b45d122434644de6844e8e0beda29503,
title = "Electrical characteristics of fluorine-doped zinc oxynitride thin-film transistors",
abstract = "In this work, an alternative type of high mobility semiconductor, zinc oxynitride (ZnON), is studied by both theoretical calculations and experimental evaluation of thin films and TFT devices. It is demonstrated that the addition of fluorine, in ZnON, removes the formation of nitrogen vacancies, and significantly improves electrical characteristics of the ZnON TFT.",
author = "Kim, {Hyoung Do} and Kim, {Jong Heon} and Kim, {Hyun Suk}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting ; Conference date: 01-10-2017 Through 05-10-2017",
year = "2017",
doi = "10.1149/08004.0199ecst",
language = "English",
isbn = "9781623324735",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "199--204",
editor = "J. Murota and Claeys, {C. L.} and H. Iwai and M. Tao and S. Deleonibus and A. Mai and K. Shiojima and P. Chin",
booktitle = "ECS Transactions",
address = "United States",
edition = "4",
}