Electrical characteristics of fluorine-doped zinc oxynitride thin-film transistors

Hyoung Do Kim, Jong Heon Kim, Hyun Suk Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, an alternative type of high mobility semiconductor, zinc oxynitride (ZnON), is studied by both theoretical calculations and experimental evaluation of thin films and TFT devices. It is demonstrated that the addition of fluorine, in ZnON, removes the formation of nitrogen vacancies, and significantly improves electrical characteristics of the ZnON TFT.

Original languageEnglish
Title of host publicationECS Transactions
EditorsJ. Murota, C. L. Claeys, H. Iwai, M. Tao, S. Deleonibus, A. Mai, K. Shiojima, P. Chin
PublisherElectrochemical Society Inc.
Pages199-204
Number of pages6
Edition4
ISBN (Electronic)9781607688211
ISBN (Print)9781623324735
DOIs
StatePublished - 2017
Event10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting - National Harbor, United States
Duration: 1 Oct 20175 Oct 2017

Publication series

NameECS Transactions
Number4
Volume80
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting
Country/TerritoryUnited States
CityNational Harbor
Period1/10/175/10/17

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