@inproceedings{30325908f61c46f0a87b60274200a630,
title = "Electrical characteristics of Hf-based GaAs MOS capacitors with thin HfOxNy interlayer",
abstract = "Electrical and reliability characteristic of Hfbased GaAs metal-oxide-semiconductor (MOS) capacitors (TaN/HfO2/HfO xNy/p-GaAs) with ultrathin HfOxNy interfacial layer is investigated. Charge trapping behavior has been studied under both the DC and dynamic voltage stressing. Transient response and the degradation mechanism of the dielectric have been studied both under positive and negative DC gate bias stressing conditions. Effect of interfacial layer thickness variation on flat band voltage instability is reported. It is found that both the interface and bulk traps in gate stacks contribute significantly to flat band voltage instability of HfO2-based GaAs MOS capacitors. Both types of trapping are observed under dynamic stressing with the gate hole injections.",
keywords = "GaAs, HfON, High-k gate dielectric, Plasma nitridation",
author = "T. Das and C. Mahata and Dalapati, {G. K.} and Chi, {D. Z.} and G. Sutradhar and Bose, {P. K.} and Maiti, {C. K.}",
year = "2009",
language = "English",
isbn = "9788184651522",
series = "Codec - 2009 - 4th International Conference on Computers and Devices for Communication",
booktitle = "Codec - 2009 - 4th International Conference on Computers and Devices for Communication",
note = "4th International Conference on Computers and Devices for Communication, Codec 2009 ; Conference date: 14-12-2009 Through 16-12-2009",
}