Electrical characteristics of Hf-based GaAs MOS capacitors with thin HfOxNy interlayer

T. Das, C. Mahata, G. K. Dalapati, D. Z. Chi, G. Sutradhar, P. K. Bose, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Electrical and reliability characteristic of Hfbased GaAs metal-oxide-semiconductor (MOS) capacitors (TaN/HfO2/HfO xNy/p-GaAs) with ultrathin HfOxNy interfacial layer is investigated. Charge trapping behavior has been studied under both the DC and dynamic voltage stressing. Transient response and the degradation mechanism of the dielectric have been studied both under positive and negative DC gate bias stressing conditions. Effect of interfacial layer thickness variation on flat band voltage instability is reported. It is found that both the interface and bulk traps in gate stacks contribute significantly to flat band voltage instability of HfO2-based GaAs MOS capacitors. Both types of trapping are observed under dynamic stressing with the gate hole injections.

Original languageEnglish
Title of host publicationCodec - 2009 - 4th International Conference on Computers and Devices for Communication
StatePublished - 2009
Event4th International Conference on Computers and Devices for Communication, Codec 2009 - Kolkata, India
Duration: 14 Dec 200916 Dec 2009

Publication series

NameCodec - 2009 - 4th International Conference on Computers and Devices for Communication

Conference

Conference4th International Conference on Computers and Devices for Communication, Codec 2009
Country/TerritoryIndia
CityKolkata
Period14/12/0916/12/09

Keywords

  • GaAs
  • HfON
  • High-k gate dielectric
  • Plasma nitridation

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