Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

Chee Hong An; Chandreswar Mahata; Young Chul Byun; Myung Soo Lee; Yu Seon Kang; Mann Ho Cho; Hyoungsub Kim

doi:10.1002/pssa.201228759

Electrical characteristics of HfO₂ films on InP with different atomic-layer-deposition temperatures

Chee Hong An
, Chandreswar Mahata
, Young Chul Byun
, Myung Soo Lee
, Yu Seon Kang
, Mann Ho Cho
, Hyoungsub Kim

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO₂ films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO₂ film side.

Original language	English
Pages (from-to)	1381-1385
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	210
Issue number	7
DOIs	https://doi.org/10.1002/pssa.201228759
State	Published - Jul 2013

Keywords

atomic layer deposition
dielectric properties
HfO
InP
thin films

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10.1002/pssa.201228759

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title = "Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures",

abstract = "The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.",

keywords = "atomic layer deposition, dielectric properties, HfO, InP, thin films",

author = "An, \{Chee Hong\} and Chandreswar Mahata and Byun, \{Young Chul\} and Lee, \{Myung Soo\} and Kang, \{Yu Seon\} and Cho, \{Mann Ho\} and Hyoungsub Kim",

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language = "English",

volume = "210",

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T1 - Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

AU - An, Chee Hong

AU - Mahata, Chandreswar

AU - Byun, Young Chul

AU - Lee, Myung Soo

AU - Kang, Yu Seon

AU - Cho, Mann Ho

AU - Kim, Hyoungsub

PY - 2013/7

Y1 - 2013/7

N2 - The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.

AB - The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.

KW - atomic layer deposition

KW - dielectric properties

KW - HfO

KW - InP

KW - thin films

UR - https://www.scopus.com/pages/publications/84881390004

U2 - 10.1002/pssa.201228759

DO - 10.1002/pssa.201228759

M3 - Article

AN - SCOPUS:84881390004

SN - 1862-6300

VL - 210

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EP - 1385

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 7

ER -

Electrical characteristics of HfO₂ films on InP with different atomic-layer-deposition temperatures

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Keywords

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