Electrical characteristics of poly (3-hexylthiophene) thin film transistors printed and spin-coated on plastic substrates

Sung Kyu Park, Yong Hoon Kim, Jeong In Han, Dae Gyu Moon, Won Keun Kim, Min Gi Kwak

Research output: Contribution to journalArticlepeer-review

51 Scopus citations

Abstract

Poly (3-hexylthiophene) (P3HT)-based thin film transistors (TFTs) array was fabricated on plastic substrates with O2 plasma treatment and solution-based processes. Both the changes of hole Schottky barrier height and surface roughness of the gate insulators are supposed to account for the increased carrier mobility and charge carrying ability of the plasma treated devices. Additionally, polymer active layers formed by contact printing and spin-coating methods have been analyzed, which revealed that the electrical properties are different from the semiconductor growth mechanism. Based on the experiments, we fabricated P3HT TFTs array with 0.02-0.025 cm2/V s in saturation carrier mobility and on/off current ratio about 103-104 on polycarbonate (PC) substrates.

Original languageEnglish
Pages (from-to)377-384
Number of pages8
JournalSynthetic Metals
Volume139
Issue number2
DOIs
StatePublished - 5 Sep 2003

Keywords

  • Poly (3-hexylthiophene)
  • Spin-coating
  • Thin film transistor (TFT)

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