Abstract
Poly (3-hexylthiophene) (P3HT)-based thin film transistors (TFTs) array was fabricated on plastic substrates with O2 plasma treatment and solution-based processes. Both the changes of hole Schottky barrier height and surface roughness of the gate insulators are supposed to account for the increased carrier mobility and charge carrying ability of the plasma treated devices. Additionally, polymer active layers formed by contact printing and spin-coating methods have been analyzed, which revealed that the electrical properties are different from the semiconductor growth mechanism. Based on the experiments, we fabricated P3HT TFTs array with 0.02-0.025 cm2/V s in saturation carrier mobility and on/off current ratio about 103-104 on polycarbonate (PC) substrates.
Original language | English |
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Pages (from-to) | 377-384 |
Number of pages | 8 |
Journal | Synthetic Metals |
Volume | 139 |
Issue number | 2 |
DOIs | |
State | Published - 5 Sep 2003 |
Keywords
- Poly (3-hexylthiophene)
- Spin-coating
- Thin film transistor (TFT)