Electrical characteristics of resistive switching memory with metal oxide nanoparticles on a graphene layer

Dong Uk Lee; Dongwook Kim; Eun Kyu Kim; Won Ju Cho; Young Ho Kim; Hyunsik Im

doi:10.1016/j.tsf.2013.02.111

Electrical characteristics of resistive switching memory with metal oxide nanoparticles on a graphene layer

Dong Uk Lee, Dongwook Kim, Eun Kyu Kim, Won Ju Cho, Young Ho Kim, Hyunsik Im

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A resistive switching memory device with SnO₂ nanoparticles embedded in a biphenyl-tertracarboxylic dianhydride-phenylene diamine polyimide layer on single layered graphene (SLG) was demonstrated, and its electrical properties were characterized. Current levels in the resistance switching memory device were controlled by applying pulse voltages of ± 10 V for 100 ms. The current values of high and low resistance states (HRS and LRS) at 1 V were measured to be about 4.60 × 10^{- 4} A and 3.04 × 10 ^{- 3} A, respectively. The ratio of the HRS and LRS after applying a pulse bias of ± 10 V appeared to be about 7.9 at 1 V, and this result was retained after 10⁴ s. The resistance switching may originate from carrier charging and recombination effects into the SnO₂ nanoparticles through modulation of the Fermi level of the SLG due to the applied bias.

Original language	English
Pages (from-to)	106-109
Number of pages	4
Journal	Thin Solid Films
Volume	543
DOIs	https://doi.org/10.1016/j.tsf.2013.02.111
State	Published - 30 Sep 2013

Keywords

Graphene
Nonvolatile memory
Polyimide
Resistance switching
SnO

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title = "Electrical characteristics of resistive switching memory with metal oxide nanoparticles on a graphene layer",

abstract = "A resistive switching memory device with SnO2 nanoparticles embedded in a biphenyl-tertracarboxylic dianhydride-phenylene diamine polyimide layer on single layered graphene (SLG) was demonstrated, and its electrical properties were characterized. Current levels in the resistance switching memory device were controlled by applying pulse voltages of ± 10 V for 100 ms. The current values of high and low resistance states (HRS and LRS) at 1 V were measured to be about 4.60 × 10- 4 A and 3.04 × 10 - 3 A, respectively. The ratio of the HRS and LRS after applying a pulse bias of ± 10 V appeared to be about 7.9 at 1 V, and this result was retained after 104 s. The resistance switching may originate from carrier charging and recombination effects into the SnO2 nanoparticles through modulation of the Fermi level of the SLG due to the applied bias.",

keywords = "Graphene, Nonvolatile memory, Polyimide, Resistance switching, SnO",

author = "Lee, {Dong Uk} and Dongwook Kim and Kim, {Eun Kyu} and Cho, {Won Ju} and Kim, {Young Ho} and Hyunsik Im",

year = "2013",

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doi = "10.1016/j.tsf.2013.02.111",

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journal = "Thin Solid Films",

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T1 - Electrical characteristics of resistive switching memory with metal oxide nanoparticles on a graphene layer

AU - Lee, Dong Uk

AU - Kim, Dongwook

AU - Kim, Eun Kyu

AU - Cho, Won Ju

AU - Kim, Young Ho

AU - Im, Hyunsik

PY - 2013/9/30

Y1 - 2013/9/30

N2 - A resistive switching memory device with SnO2 nanoparticles embedded in a biphenyl-tertracarboxylic dianhydride-phenylene diamine polyimide layer on single layered graphene (SLG) was demonstrated, and its electrical properties were characterized. Current levels in the resistance switching memory device were controlled by applying pulse voltages of ± 10 V for 100 ms. The current values of high and low resistance states (HRS and LRS) at 1 V were measured to be about 4.60 × 10- 4 A and 3.04 × 10 - 3 A, respectively. The ratio of the HRS and LRS after applying a pulse bias of ± 10 V appeared to be about 7.9 at 1 V, and this result was retained after 104 s. The resistance switching may originate from carrier charging and recombination effects into the SnO2 nanoparticles through modulation of the Fermi level of the SLG due to the applied bias.

AB - A resistive switching memory device with SnO2 nanoparticles embedded in a biphenyl-tertracarboxylic dianhydride-phenylene diamine polyimide layer on single layered graphene (SLG) was demonstrated, and its electrical properties were characterized. Current levels in the resistance switching memory device were controlled by applying pulse voltages of ± 10 V for 100 ms. The current values of high and low resistance states (HRS and LRS) at 1 V were measured to be about 4.60 × 10- 4 A and 3.04 × 10 - 3 A, respectively. The ratio of the HRS and LRS after applying a pulse bias of ± 10 V appeared to be about 7.9 at 1 V, and this result was retained after 104 s. The resistance switching may originate from carrier charging and recombination effects into the SnO2 nanoparticles through modulation of the Fermi level of the SLG due to the applied bias.

KW - Graphene

KW - Nonvolatile memory

KW - Polyimide

KW - Resistance switching

KW - SnO

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SN - 0040-6090

VL - 543

SP - 106

EP - 109

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Electrical characteristics of resistive switching memory with metal oxide nanoparticles on a graphene layer

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Keywords

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