Electrical charging effect in room-temperature-ferromagnetic ZnMnO:N nanocrystals embedded into a SiO2 layer

Sejoon Lee; Deuk Young Kim; Tae Won Kang; Hyung Koun Cho

doi:10.3938/jkps.52.1900

Electrical charging effect in room-temperature-ferromagnetic ZnMnO:N nanocrystals embedded into a SiO₂ layer

Sejoon Lee, Deuk Young Kim, Tae Won Kang, Hyung Koun Cho

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The (Zn_0.93Mn_0.07)O:N nanocrystals embedded into a SiO₂ layer were formed by using the thermal-nucleation process with a SiO₂/(Zn_0.93Mn_0.07)O:N/SiO₂ ultrathin multilayer. The formed (Zn_0.93Mn_0.07)O:N nanocrystals showed clear ferromagnetism with M_r ∼ 6.54 × 10^-6 emu/g and H_c ∼ 77.78 Oe, which persisted up to 350 K. The observed high-T_C ferromagnetism is considered as originating from the enhancement of ferromagnetic coupling due to increases in both the carrier-confinement effect and the manganese-disorder effect attributed to the nucleation of (Zn_0.93Mn_0.07)O:N nanocrystallites. The memory capacitor fabricated using the (Zn_0.93Mn _0.07)O:N nanocrystals clearly showed an electrical charging effect with Δ_FB ∼ 0.63 V and the spin tunneling diode fabricated using the room-temperature-ferromagnetic (Zn_0.93Mn_0.07)O:N nanocrystals revealed the sequential tunnel transport behaviors of spin-polarized carriers. These results suggest that (Zn_0.93Mn _0.07)O:N nanocrystals can be used for spin-functional memory devices.

Original language	English
Pages (from-to)	1900-1904
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	52
Issue number	6
DOIs	https://doi.org/10.3938/jkps.52.1900
State	Published - Jun 2008

Keywords

High-T ferromagnetism
Memory effect
Mn- and N-codoped ZnO
Nanocrystals

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title = "Electrical charging effect in room-temperature-ferromagnetic ZnMnO:N nanocrystals embedded into a SiO2 layer",

abstract = "The (Zn0.93Mn0.07)O:N nanocrystals embedded into a SiO2 layer were formed by using the thermal-nucleation process with a SiO2/(Zn0.93Mn0.07)O:N/SiO2 ultrathin multilayer. The formed (Zn0.93Mn0.07)O:N nanocrystals showed clear ferromagnetism with Mr ∼ 6.54 × 10-6 emu/g and Hc ∼ 77.78 Oe, which persisted up to 350 K. The observed high-TC ferromagnetism is considered as originating from the enhancement of ferromagnetic coupling due to increases in both the carrier-confinement effect and the manganese-disorder effect attributed to the nucleation of (Zn0.93Mn0.07)O:N nanocrystallites. The memory capacitor fabricated using the (Zn0.93Mn 0.07)O:N nanocrystals clearly showed an electrical charging effect with ΔFB ∼ 0.63 V and the spin tunneling diode fabricated using the room-temperature-ferromagnetic (Zn0.93Mn0.07)O:N nanocrystals revealed the sequential tunnel transport behaviors of spin-polarized carriers. These results suggest that (Zn0.93Mn 0.07)O:N nanocrystals can be used for spin-functional memory devices.",

keywords = "High-T ferromagnetism, Memory effect, Mn- and N-codoped ZnO, Nanocrystals",

author = "Sejoon Lee and Kim, {Deuk Young} and Kang, {Tae Won} and Cho, {Hyung Koun}",

year = "2008",

month = jun,

doi = "10.3938/jkps.52.1900",

language = "English",

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TY - JOUR

T1 - Electrical charging effect in room-temperature-ferromagnetic ZnMnO:N nanocrystals embedded into a SiO2 layer

AU - Lee, Sejoon

AU - Kim, Deuk Young

AU - Kang, Tae Won

AU - Cho, Hyung Koun

PY - 2008/6

Y1 - 2008/6

N2 - The (Zn0.93Mn0.07)O:N nanocrystals embedded into a SiO2 layer were formed by using the thermal-nucleation process with a SiO2/(Zn0.93Mn0.07)O:N/SiO2 ultrathin multilayer. The formed (Zn0.93Mn0.07)O:N nanocrystals showed clear ferromagnetism with Mr ∼ 6.54 × 10-6 emu/g and Hc ∼ 77.78 Oe, which persisted up to 350 K. The observed high-TC ferromagnetism is considered as originating from the enhancement of ferromagnetic coupling due to increases in both the carrier-confinement effect and the manganese-disorder effect attributed to the nucleation of (Zn0.93Mn0.07)O:N nanocrystallites. The memory capacitor fabricated using the (Zn0.93Mn 0.07)O:N nanocrystals clearly showed an electrical charging effect with ΔFB ∼ 0.63 V and the spin tunneling diode fabricated using the room-temperature-ferromagnetic (Zn0.93Mn0.07)O:N nanocrystals revealed the sequential tunnel transport behaviors of spin-polarized carriers. These results suggest that (Zn0.93Mn 0.07)O:N nanocrystals can be used for spin-functional memory devices.

AB - The (Zn0.93Mn0.07)O:N nanocrystals embedded into a SiO2 layer were formed by using the thermal-nucleation process with a SiO2/(Zn0.93Mn0.07)O:N/SiO2 ultrathin multilayer. The formed (Zn0.93Mn0.07)O:N nanocrystals showed clear ferromagnetism with Mr ∼ 6.54 × 10-6 emu/g and Hc ∼ 77.78 Oe, which persisted up to 350 K. The observed high-TC ferromagnetism is considered as originating from the enhancement of ferromagnetic coupling due to increases in both the carrier-confinement effect and the manganese-disorder effect attributed to the nucleation of (Zn0.93Mn0.07)O:N nanocrystallites. The memory capacitor fabricated using the (Zn0.93Mn 0.07)O:N nanocrystals clearly showed an electrical charging effect with ΔFB ∼ 0.63 V and the spin tunneling diode fabricated using the room-temperature-ferromagnetic (Zn0.93Mn0.07)O:N nanocrystals revealed the sequential tunnel transport behaviors of spin-polarized carriers. These results suggest that (Zn0.93Mn 0.07)O:N nanocrystals can be used for spin-functional memory devices.

KW - High-T ferromagnetism

KW - Memory effect

KW - Mn- and N-codoped ZnO

KW - Nanocrystals

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Electrical charging effect in room-temperature-ferromagnetic ZnMnO:N nanocrystals embedded into a SiO₂ layer

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