Electrical modulation of superconducting critical temperature in liquid-gated thin niobium films

Jiman Choi; R. Pradheesh; Hyungsang Kim; Hyunsik Im; Yonuk Chong; Dong Hun Chae

doi:10.1063/1.4890085

Electrical modulation of superconducting critical temperature in liquid-gated thin niobium films

Jiman Choi, R. Pradheesh, Hyungsang Kim, Hyunsik Im, Yonuk Chong, Dong Hun Chae

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We demonstrate that the superconducting critical temperature (T_c) of thin niobium films can be electrically modulated in a liquid-gated geometry device. T_c can be suppressed and enhanced by applying positive and negative gate voltage, respectively, in a reversible manner within a range of about 0.1 K. At a fixed temperature below T_c, we observed that the superconducting critical current can be modulated by gate voltage. This result suggests a possibility of an electrically controlled switching device operating at or above liquid helium temperature, where superconductivity can be turned on or off solely by the applied gate voltage.

Original language	English
Article number	012601
Journal	Applied Physics Letters
Volume	105
Issue number	1
DOIs	https://doi.org/10.1063/1.4890085
State	Published - 7 Jul 2014

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abstract = "We demonstrate that the superconducting critical temperature (Tc) of thin niobium films can be electrically modulated in a liquid-gated geometry device. Tc can be suppressed and enhanced by applying positive and negative gate voltage, respectively, in a reversible manner within a range of about 0.1 K. At a fixed temperature below Tc, we observed that the superconducting critical current can be modulated by gate voltage. This result suggests a possibility of an electrically controlled switching device operating at or above liquid helium temperature, where superconductivity can be turned on or off solely by the applied gate voltage.",

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AU - Choi, Jiman

AU - Pradheesh, R.

AU - Kim, Hyungsang

AU - Im, Hyunsik

AU - Chong, Yonuk

AU - Chae, Dong Hun

PY - 2014/7/7

Y1 - 2014/7/7

N2 - We demonstrate that the superconducting critical temperature (Tc) of thin niobium films can be electrically modulated in a liquid-gated geometry device. Tc can be suppressed and enhanced by applying positive and negative gate voltage, respectively, in a reversible manner within a range of about 0.1 K. At a fixed temperature below Tc, we observed that the superconducting critical current can be modulated by gate voltage. This result suggests a possibility of an electrically controlled switching device operating at or above liquid helium temperature, where superconductivity can be turned on or off solely by the applied gate voltage.

AB - We demonstrate that the superconducting critical temperature (Tc) of thin niobium films can be electrically modulated in a liquid-gated geometry device. Tc can be suppressed and enhanced by applying positive and negative gate voltage, respectively, in a reversible manner within a range of about 0.1 K. At a fixed temperature below Tc, we observed that the superconducting critical current can be modulated by gate voltage. This result suggests a possibility of an electrically controlled switching device operating at or above liquid helium temperature, where superconductivity can be turned on or off solely by the applied gate voltage.

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Electrical modulation of superconducting critical temperature in liquid-gated thin niobium films

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