Electrical properties of InAs/InP core-shell nanowires

Chan Ho Choi, Heedae Kim, Jeongwoo Hwang, Minhyeok Cho, Jae Cheol Shin

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Surface passivation of semiconductor nanowires is essential for applications in electrical and optical devices because of the significant surface recombination loss resulting from their large surface-to-volume ratio. In the present study, the electrical properties of the InAs nanowires were examined with the in situ passivation of the InP layer (i.e., InAs/InP core-shell structure). The nanowires were grown on a Si (111) substrate by catalyst-free growth using a metalorganic chemical vapor deposition system. Despite the large lattice mismatch between InAs and InP, strong enhancement of the electron mobility was observed for the InAs/InP core-shell nanowires.

Original languageEnglish
Pages (from-to)11535-11537
Number of pages3
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number11
DOIs
StatePublished - 2016

Keywords

  • Core-shell
  • InAs
  • MOCVD
  • Nanowires
  • Passivation

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