Abstract
Surface passivation of semiconductor nanowires is essential for applications in electrical and optical devices because of the significant surface recombination loss resulting from their large surface-to-volume ratio. In the present study, the electrical properties of the InAs nanowires were examined with the in situ passivation of the InP layer (i.e., InAs/InP core-shell structure). The nanowires were grown on a Si (111) substrate by catalyst-free growth using a metalorganic chemical vapor deposition system. Despite the large lattice mismatch between InAs and InP, strong enhancement of the electron mobility was observed for the InAs/InP core-shell nanowires.
| Original language | English |
|---|---|
| Pages (from-to) | 11535-11537 |
| Number of pages | 3 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 16 |
| Issue number | 11 |
| DOIs | |
| State | Published - 2016 |
Keywords
- Core-shell
- InAs
- MOCVD
- Nanowires
- Passivation