Electrically and Optically Controllable p–n Junction Memtransistor Based on an Al2O3 Encapsulated 2D Te/ReS2 van der Waals Heterostructure

Duc Anh Nguyen, Yongcheol Jo, Thi Uyen Tran, Mun Seok Jeong, Hyungsang Kim, Hyunsik Im

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

The exploration of memtransistors as a combination of a memristor and a transistor has recently attracted intensive attention because it offers a promising candidate for next-generation multilevel nonvolatile memories and synaptic devices. However, the present state-of-the-art memtransistors, which are based on a single material, such as MoS2 or perovskite, exhibit a relatively low switching ratio, require extremely high electric fields to modulate bistable resistance states and do not perform multifunctional operations. Here, the realization of an electrically and optically controllable p–n junction memtransistor using an Al2O3 encapsulated 2D Te/ReS2 van der Waals heterostructure is reported. The hybrid memtransistor shows a reversible bipolar resistance switching behavior between a low resistance state and a high resistance state with a high switching ratio up to 106 at a low operating voltage (<10 V), high cycling endurance, and long retention time. Moreover, multiple resistance states are achieved by applying different bias voltages, gate voltages, or light powers. In addition, logical operations, including the inverter and AND/OR gates, and synaptic activities are performed by controlling the optical and electrical inputs. The work offers a novel strategy for the reliable fabrication of p–n junction memtransistors for multifunctional devices and neuromorphic applications.

Original languageEnglish
Article number2101303
JournalSmall Methods
Volume5
Issue number12
DOIs
StatePublished - 15 Dec 2021

Keywords

  • Al O encapsulation
  • heterostructure p–n junctions
  • logic gates
  • memtransistors
  • ReS tellurene

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