Electrodeposition and characterization of HgSe thin films

T. Mahalingam; A. Kathalingam; C. Sanjeeviraja; R. Chandramohan; J. P. Chu; Yong Deak Kim; S. Velumani

doi:10.1016/j.matchar.2006.11.022

Electrodeposition and characterization of HgSe thin films

T. Mahalingam, A. Kathalingam, C. Sanjeeviraja, R. Chandramohan, J. P. Chu, Yong Deak Kim, S. Velumani

Millimeterwave Innovation Technology Research Center

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Abstract

In this article we present the results on the electrochemical synthesis of mercury selenide (HgSe), an interesting II-VI material. HgSe thin films were deposited potentiostatically on conducting glass substrates from an aqueous bath containing HgCl₂ and SeO₂. The prepared films were characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), scanning electron microscope (SEM) and optical absorption techniques. Stoichiometric polycrystalline HgSe films were obtained at a deposition potential around - 0.7 V vs SCE, at a temperature 60 °C and a pH value of 3.5. The as-grown films exhibited a direct optical band gap of 0.78 eV. This report deals with the growth mechanism and a study related to the influence of electrolyte bath composition, deposition potential, temperature and pH on the properties of HgSe thin films.

Original language	English
Pages (from-to)	735-739
Number of pages	5
Journal	Materials Characterization
Volume	58
Issue number	8-9 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.matchar.2006.11.022
State	Published - Aug 2007

Keywords

Electrodeposition
Mercury selenide
Semimetals
Thin films

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10.1016/j.matchar.2006.11.022

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title = "Electrodeposition and characterization of HgSe thin films",

abstract = "In this article we present the results on the electrochemical synthesis of mercury selenide (HgSe), an interesting II-VI material. HgSe thin films were deposited potentiostatically on conducting glass substrates from an aqueous bath containing HgCl2 and SeO2. The prepared films were characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), scanning electron microscope (SEM) and optical absorption techniques. Stoichiometric polycrystalline HgSe films were obtained at a deposition potential around - 0.7 V vs SCE, at a temperature 60 °C and a pH value of 3.5. The as-grown films exhibited a direct optical band gap of 0.78 eV. This report deals with the growth mechanism and a study related to the influence of electrolyte bath composition, deposition potential, temperature and pH on the properties of HgSe thin films.",

keywords = "Electrodeposition, Mercury selenide, Semimetals, Thin films",

author = "T. Mahalingam and A. Kathalingam and C. Sanjeeviraja and R. Chandramohan and Chu, {J. P.} and Kim, {Yong Deak} and S. Velumani",

year = "2007",

month = aug,

doi = "10.1016/j.matchar.2006.11.022",

language = "English",

volume = "58",

pages = "735--739",

journal = "Materials Characterization",

issn = "1044-5803",

publisher = "Elsevier Inc.",

number = "8-9 SPEC. ISS.",

}

TY - JOUR

T1 - Electrodeposition and characterization of HgSe thin films

AU - Mahalingam, T.

AU - Kathalingam, A.

AU - Sanjeeviraja, C.

AU - Chandramohan, R.

AU - Chu, J. P.

AU - Kim, Yong Deak

AU - Velumani, S.

PY - 2007/8

Y1 - 2007/8

N2 - In this article we present the results on the electrochemical synthesis of mercury selenide (HgSe), an interesting II-VI material. HgSe thin films were deposited potentiostatically on conducting glass substrates from an aqueous bath containing HgCl2 and SeO2. The prepared films were characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), scanning electron microscope (SEM) and optical absorption techniques. Stoichiometric polycrystalline HgSe films were obtained at a deposition potential around - 0.7 V vs SCE, at a temperature 60 °C and a pH value of 3.5. The as-grown films exhibited a direct optical band gap of 0.78 eV. This report deals with the growth mechanism and a study related to the influence of electrolyte bath composition, deposition potential, temperature and pH on the properties of HgSe thin films.

AB - In this article we present the results on the electrochemical synthesis of mercury selenide (HgSe), an interesting II-VI material. HgSe thin films were deposited potentiostatically on conducting glass substrates from an aqueous bath containing HgCl2 and SeO2. The prepared films were characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), scanning electron microscope (SEM) and optical absorption techniques. Stoichiometric polycrystalline HgSe films were obtained at a deposition potential around - 0.7 V vs SCE, at a temperature 60 °C and a pH value of 3.5. The as-grown films exhibited a direct optical band gap of 0.78 eV. This report deals with the growth mechanism and a study related to the influence of electrolyte bath composition, deposition potential, temperature and pH on the properties of HgSe thin films.

KW - Electrodeposition

KW - Mercury selenide

KW - Semimetals

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=34250672336&partnerID=8YFLogxK

U2 - 10.1016/j.matchar.2006.11.022

DO - 10.1016/j.matchar.2006.11.022

M3 - Article

AN - SCOPUS:34250672336

SN - 1044-5803

VL - 58

SP - 735

EP - 739

JO - Materials Characterization

JF - Materials Characterization

IS - 8-9 SPEC. ISS.

ER -

Electrodeposition and characterization of HgSe thin films

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Keywords

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