Electrodeposition and characterization of HgSe thin films

In this article we present the results on the electrochemical synthesis of mercury selenide (HgSe), an interesting II-VI material. HgSe thin films were deposited potentiostatically on conducting glass substrates from an aqueous bath containing HgCl₂ and SeO₂. The prepared films were characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), scanning electron microscope (SEM) and optical absorption techniques. Stoichiometric polycrystalline HgSe films were obtained at a deposition potential around - 0.7 V vs SCE, at a temperature 60 °C and a pH value of 3.5. The as-grown films exhibited a direct optical band gap of 0.78 eV. This report deals with the growth mechanism and a study related to the influence of electrolyte bath composition, deposition potential, temperature and pH on the properties of HgSe thin films.