Electromagnetic modeling of through-silicon via (TSV) interconnections using cylindrical modal basis functions

Ki Jin Han, Madhavan Swaminathan, Tapobrata Bandyopadhyay

Research output: Contribution to journalArticlepeer-review

96 Scopus citations

Abstract

This paper proposes an efficient method to model through-silicon via (TSV) interconnections, an essential building block for the realization of silicon-based 3-D systems. The proposed method results in equivalent network parameters that include the combined effect of conductor, insulator, and silicon substrate. Although the modeling method is based on solving Maxwell's equation in integral form, the method uses a small number of global modal basis functions and can be much faster than discretization-based integral-equation methods. Through comparison with 3-D full-wave simulations, this paper validates the accuracy and the efficiency of the proposed modeling method.

Original languageEnglish
Article number5492298
Pages (from-to)804-817
Number of pages14
JournalIEEE Transactions on Advanced Packaging
Volume33
Issue number4
DOIs
StatePublished - Nov 2010

Keywords

  • $RLGC; extraction
  • Cylindrical modal basis function
  • excess capacitance
  • integral equation
  • interconnection modeling
  • three-dimensional (3-D) integration
  • through-silicon via (TSV)

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