Electron beam-formed ferromagnetic defects on MoS2 surface along 1 T phase transition

Sang Wook Han, Youngsin Park, Young Hun Hwang, Soyoung Jekal, Manil Kang, Wang G. Lee, Woochul Yang, Gun Do Lee, Soon Cheol Hong

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

1 T phase incorporation into 2H-MoS2 via an optimal electron irradiation leads to induce a weak ferromagnetic state at room temperature, together with the improved transport property. In addition to the 1T-like defects, the electron irradiation on the cleaved MoS2 surface forms the concentric circle-type defects that are caused by the 2 H/1 T phase transition and the vacancies of the nearby S atoms of the Mo atoms. The electron irradiation-reduced bandgap is promising in vanishing the Schottky barrier to attaining spintronics device. The simple method to control and improve the magnetic and electrical properties on the MoS2 surface provides suitable ways for the low-dimensional device applications.

Original languageEnglish
Article number38730
JournalScientific Reports
Volume6
DOIs
StatePublished - 15 Dec 2016

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