Electronic and optical properties of ZnOS/ZnO quantum-well structures with polarization effects

H. C. Jeon; Sunil Kumar; S. J. Lee; T. W. Kang; S. H. Park

doi:10.3938/jkps.69.370

Electronic and optical properties of ZnOS/ZnO quantum-well structures with polarization effects

H. C. Jeon, Sunil Kumar, S. J. Lee, T. W. Kang, S. H. Park

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The optical properties of ZnOS/ZnO quantum-well (QW) structures, considering piezoelectric and spontaneous polarizations, are investigated by using many-body effects. The ZnOS/ZnO QW structure is found to have small optical gain because SP polarizations have a negative sign in the well and increase with the inclusion of S. These results demonstrate that ZnOS/ZnO QW structure have a strong internal field. This structure offers further flexibility for band-gap engineering and potentially facilitates p-type doping of ZnO-based light-emitting diodes.

Original language	English
Pages (from-to)	370-372
Number of pages	3
Journal	Journal of the Korean Physical Society
Volume	69
Issue number	3
DOIs	https://doi.org/10.3938/jkps.69.370
State	Published - 1 Aug 2016

Keywords

Internal field
Optical gain
Quantum well

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10.3938/jkps.69.370

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title = "Electronic and optical properties of ZnOS/ZnO quantum-well structures with polarization effects",

abstract = "The optical properties of ZnOS/ZnO quantum-well (QW) structures, considering piezoelectric and spontaneous polarizations, are investigated by using many-body effects. The ZnOS/ZnO QW structure is found to have small optical gain because SP polarizations have a negative sign in the well and increase with the inclusion of S. These results demonstrate that ZnOS/ZnO QW structure have a strong internal field. This structure offers further flexibility for band-gap engineering and potentially facilitates p-type doping of ZnO-based light-emitting diodes.",

keywords = "Internal field, Optical gain, Quantum well",

author = "Jeon, {H. C.} and Sunil Kumar and Lee, {S. J.} and Kang, {T. W.} and Park, {S. H.}",

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T1 - Electronic and optical properties of ZnOS/ZnO quantum-well structures with polarization effects

AU - Jeon, H. C.

AU - Kumar, Sunil

AU - Lee, S. J.

AU - Kang, T. W.

AU - Park, S. H.

PY - 2016/8/1

Y1 - 2016/8/1

N2 - The optical properties of ZnOS/ZnO quantum-well (QW) structures, considering piezoelectric and spontaneous polarizations, are investigated by using many-body effects. The ZnOS/ZnO QW structure is found to have small optical gain because SP polarizations have a negative sign in the well and increase with the inclusion of S. These results demonstrate that ZnOS/ZnO QW structure have a strong internal field. This structure offers further flexibility for band-gap engineering and potentially facilitates p-type doping of ZnO-based light-emitting diodes.

AB - The optical properties of ZnOS/ZnO quantum-well (QW) structures, considering piezoelectric and spontaneous polarizations, are investigated by using many-body effects. The ZnOS/ZnO QW structure is found to have small optical gain because SP polarizations have a negative sign in the well and increase with the inclusion of S. These results demonstrate that ZnOS/ZnO QW structure have a strong internal field. This structure offers further flexibility for band-gap engineering and potentially facilitates p-type doping of ZnO-based light-emitting diodes.

KW - Internal field

KW - Optical gain

KW - Quantum well

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DO - 10.3938/jkps.69.370

M3 - Article

AN - SCOPUS:84982298843

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EP - 372

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Electronic and optical properties of ZnOS/ZnO quantum-well structures with polarization effects

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Keywords

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