TY - JOUR
T1 - Electronic structure and thermal stability of nitrided Hf silicate films using a direct N plasma
AU - Cho, M. H.
AU - Chung, K. B.
AU - Moon, D. W.
PY - 2006
Y1 - 2006
N2 - The thermal stability and electronic structure of nitrided xHf O2 (100-x) Si O2 (HfSiO) (x=30%, 55%, and 70%), prepared using a direct N plasma treatment, were investigated. N 1s spectra of nitrided Hf silicate films indicate that complex chemical states are generated. In particular, energy states with a high binding energy are stable, even after a postnitridation annealing. The quantity of N incorporated into the film is not dependent on the mole fraction of Hf O2 in the film, while the thermal stability of the N in the film is significantly influenced by the fraction of Hf O2 present. The thermal stability of the N in the film critically affects the composition and thickness of the film: i.e., after the postnitridation annealing, the thickness of the silicate film and the quantity of Hf and N are decreased, as the result of the dissociation of unstable Hf-N bonds.
AB - The thermal stability and electronic structure of nitrided xHf O2 (100-x) Si O2 (HfSiO) (x=30%, 55%, and 70%), prepared using a direct N plasma treatment, were investigated. N 1s spectra of nitrided Hf silicate films indicate that complex chemical states are generated. In particular, energy states with a high binding energy are stable, even after a postnitridation annealing. The quantity of N incorporated into the film is not dependent on the mole fraction of Hf O2 in the film, while the thermal stability of the N in the film is significantly influenced by the fraction of Hf O2 present. The thermal stability of the N in the film critically affects the composition and thickness of the film: i.e., after the postnitridation annealing, the thickness of the silicate film and the quantity of Hf and N are decreased, as the result of the dissociation of unstable Hf-N bonds.
UR - http://www.scopus.com/inward/record.url?scp=33750709298&partnerID=8YFLogxK
U2 - 10.1063/1.2374852
DO - 10.1063/1.2374852
M3 - Article
AN - SCOPUS:33750709298
SN - 0003-6951
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 18
M1 - 182908
ER -