Electrosynthesis of copper phosphide thin films for efficient water oxidation

Sambhaji M. Pawar; Bharati S. Pawar; Pravin T. Babar; Abu Talha Aqueel Ahmed; Harish S. Chavan; Yongcheol Jo; Sangeun Cho; Jongmin Kim; Akbar I. Inamdar; Jin Hyeok Kim; Hyungsang Kim; Hyunsik Im

doi:10.1016/j.matlet.2019.01.118

Electrosynthesis of copper phosphide thin films for efficient water oxidation

Sambhaji M. Pawar, Bharati S. Pawar, Pravin T. Babar, Abu Talha Aqueel Ahmed, Harish S. Chavan, Yongcheol Jo, Sangeun Cho, Jongmin Kim, Akbar I. Inamdar, Jin Hyeok Kim, Hyungsang Kim, Hyunsik Im

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

A copper phosphide (Cu ₃ P) thin film is synthesized on a Ni foam using a one-step electrodeposition method at room temperature and annealed at 300 °C in Ar atmosphere. The Cu ₃ P film is amorphous and has a flat morphology with surface voids. It works as an electrocatalyst for water oxidation in an alkaline 1 M KOH electrolyte. It exhibits excellent catalytic oxygen evolution reaction with an overpotential of 310 mV, Tafel slope of 88 mV/dec, and good stability over 20 h of operation at 10 mA/cm ² . The excellent OER performance is due to its large electrochemically active surface area and low charge transfer resistance at the catalyst-electrolyte interface after the annealing.

Original language	English
Pages (from-to)	243-247
Number of pages	5
Journal	Materials Letters
Volume	241
DOIs	https://doi.org/10.1016/j.matlet.2019.01.118
State	Published - 15 Apr 2019

Keywords

Annealing effect
Copper phosphide
Electrodeposition
Oxygen evolution reaction

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10.1016/j.matlet.2019.01.118

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@article{17dd44d808d44452a995dc737fb8524e,

title = "Electrosynthesis of copper phosphide thin films for efficient water oxidation",

abstract = " A copper phosphide (Cu 3 P) thin film is synthesized on a Ni foam using a one-step electrodeposition method at room temperature and annealed at 300 °C in Ar atmosphere. The Cu 3 P film is amorphous and has a flat morphology with surface voids. It works as an electrocatalyst for water oxidation in an alkaline 1 M KOH electrolyte. It exhibits excellent catalytic oxygen evolution reaction with an overpotential of 310 mV, Tafel slope of 88 mV/dec, and good stability over 20 h of operation at 10 mA/cm 2 . The excellent OER performance is due to its large electrochemically active surface area and low charge transfer resistance at the catalyst-electrolyte interface after the annealing.",

keywords = "Annealing effect, Copper phosphide, Electrodeposition, Oxygen evolution reaction",

author = "Pawar, {Sambhaji M.} and Pawar, {Bharati S.} and Babar, {Pravin T.} and {Aqueel Ahmed}, {Abu Talha} and Chavan, {Harish S.} and Yongcheol Jo and Sangeun Cho and Jongmin Kim and Inamdar, {Akbar I.} and Kim, {Jin Hyeok} and Hyungsang Kim and Hyunsik Im",

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year = "2019",

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day = "15",

doi = "10.1016/j.matlet.2019.01.118",

language = "English",

volume = "241",

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journal = "Materials Letters",

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TY - JOUR

T1 - Electrosynthesis of copper phosphide thin films for efficient water oxidation

AU - Pawar, Sambhaji M.

AU - Pawar, Bharati S.

AU - Babar, Pravin T.

AU - Aqueel Ahmed, Abu Talha

AU - Chavan, Harish S.

AU - Jo, Yongcheol

AU - Cho, Sangeun

AU - Kim, Jongmin

AU - Inamdar, Akbar I.

AU - Kim, Jin Hyeok

AU - Kim, Hyungsang

AU - Im, Hyunsik

PY - 2019/4/15

Y1 - 2019/4/15

N2 - A copper phosphide (Cu 3 P) thin film is synthesized on a Ni foam using a one-step electrodeposition method at room temperature and annealed at 300 °C in Ar atmosphere. The Cu 3 P film is amorphous and has a flat morphology with surface voids. It works as an electrocatalyst for water oxidation in an alkaline 1 M KOH electrolyte. It exhibits excellent catalytic oxygen evolution reaction with an overpotential of 310 mV, Tafel slope of 88 mV/dec, and good stability over 20 h of operation at 10 mA/cm 2 . The excellent OER performance is due to its large electrochemically active surface area and low charge transfer resistance at the catalyst-electrolyte interface after the annealing.

AB - A copper phosphide (Cu 3 P) thin film is synthesized on a Ni foam using a one-step electrodeposition method at room temperature and annealed at 300 °C in Ar atmosphere. The Cu 3 P film is amorphous and has a flat morphology with surface voids. It works as an electrocatalyst for water oxidation in an alkaline 1 M KOH electrolyte. It exhibits excellent catalytic oxygen evolution reaction with an overpotential of 310 mV, Tafel slope of 88 mV/dec, and good stability over 20 h of operation at 10 mA/cm 2 . The excellent OER performance is due to its large electrochemically active surface area and low charge transfer resistance at the catalyst-electrolyte interface after the annealing.

KW - Annealing effect

KW - Copper phosphide

KW - Electrodeposition

KW - Oxygen evolution reaction

UR - http://www.scopus.com/inward/record.url?scp=85061135340&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2019.01.118

DO - 10.1016/j.matlet.2019.01.118

M3 - Article

AN - SCOPUS:85061135340

SN - 0167-577X

VL - 241

SP - 243

EP - 247

JO - Materials Letters

JF - Materials Letters

ER -

Electrosynthesis of copper phosphide thin films for efficient water oxidation

Abstract

Keywords

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