Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2 /Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Anwar Manzoor Rana; Tahira Akbar; Muhammad Ismail; Ejaz Ahmad; Fayyaz Hussain; Ijaz Talib; Muhammad Imran; Khalid Mehmood; Khalid Iqbal; M. Younus Nadeem

doi:10.1038/srep39539

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO₂ /Ti/CeO₂ Resistive Switching Devices by Changing Top Electrode Material

Anwar Manzoor Rana, Tahira Akbar, Muhammad Ismail, Ejaz Ahmad, Fayyaz Hussain, Ijaz Talib, Muhammad Imran, Khalid Mehmood, Khalid Iqbal, M. Younus Nadeem

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Abstract

Resistance switching characteristics of CeO₂ /Ti/CeO₂ tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO₂ /Ti/CeO₂ /Pt reveal better resistive switching performance instead of Ti/CeO₂ /Ti/CeO₂ /Pt memory stacks. As compared to the Ti/CeO₂ interface, much better ability of TaN/CeO₂ interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (∼10 2) and no significant data degradation during endurance test of >10 4 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO₂ film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO₂ based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and V set /V reset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.

Original language	English
Article number	39539
Journal	Scientific Reports
Volume	7
DOIs	https://doi.org/10.1038/srep39539
State	Published - 12 Jan 2017

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title = "Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2 /Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material",

abstract = "Resistance switching characteristics of CeO2 /Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2 /Ti/CeO2 /Pt reveal better resistive switching performance instead of Ti/CeO2 /Ti/CeO2 /Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (∼10 2) and no significant data degradation during endurance test of >10 4 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and V set /V reset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.",

author = "Rana, {Anwar Manzoor} and Tahira Akbar and Muhammad Ismail and Ejaz Ahmad and Fayyaz Hussain and Ijaz Talib and Muhammad Imran and Khalid Mehmood and Khalid Iqbal and Nadeem, {M. Younus}",

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doi = "10.1038/srep39539",

language = "English",

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T1 - Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2 /Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

AU - Rana, Anwar Manzoor

AU - Akbar, Tahira

AU - Ismail, Muhammad

AU - Ahmad, Ejaz

AU - Hussain, Fayyaz

AU - Talib, Ijaz

AU - Imran, Muhammad

AU - Mehmood, Khalid

AU - Iqbal, Khalid

AU - Nadeem, M. Younus

PY - 2017/1/12

Y1 - 2017/1/12

N2 - Resistance switching characteristics of CeO2 /Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2 /Ti/CeO2 /Pt reveal better resistive switching performance instead of Ti/CeO2 /Ti/CeO2 /Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (∼10 2) and no significant data degradation during endurance test of >10 4 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and V set /V reset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.

AB - Resistance switching characteristics of CeO2 /Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2 /Ti/CeO2 /Pt reveal better resistive switching performance instead of Ti/CeO2 /Ti/CeO2 /Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (∼10 2) and no significant data degradation during endurance test of >10 4 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and V set /V reset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.

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Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO₂ /Ti/CeO₂ Resistive Switching Devices by Changing Top Electrode Material

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