Enhanced curie temperature of InMnP:Zn-Tc∼300 K

Yoon Shon; H. C. Jeon; Y. S. Park; W. C. Lee; Seung Joo Lee; D. Y. Kim; H. S. Kim; H. J. Kim; T. W. Kang; Y. J. Park; Chong S. Yoon; K. S. Chung

doi:10.1063/1.1790074

Enhanced curie temperature of InMnP:Zn-T_c∼300 K

Yoon Shon, H. C. Jeon, Y. S. Park, W. C. Lee, Seung Joo Lee, D. Y. Kim, H. S. Kim, H. J. Kim, T. W. Kang, Y. J. Park, Chong S. Yoon, K. S. Chung

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The characteristics of InMnP:Zn, with the application of enhanced Curi temperature was discussed. The sample by characterized by transmission electron microscopy and no evidence of secondary phase formation of InMn:Zn was found. It was observed that the energy dispersive spectroscopy (EDX) peaks measured for the samples annealed at 500°C for 60 s and 550° C for 30 s displayed peaks of Mn with molar concentration near 3%. It was found that a ferromagnetic semiconductor at room temperature could be formed in diluted magnetic semiconductor based on GaMnN and InMnP additionally co-doped with Mg and Zn, respectively.

Original language	English
Pages (from-to)	1736-1738
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	10
DOIs	https://doi.org/10.1063/1.1790074
State	Published - 6 Sep 2004

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title = "Enhanced curie temperature of InMnP:Zn-Tc∼300 K",

abstract = "The characteristics of InMnP:Zn, with the application of enhanced Curi temperature was discussed. The sample by characterized by transmission electron microscopy and no evidence of secondary phase formation of InMn:Zn was found. It was observed that the energy dispersive spectroscopy (EDX) peaks measured for the samples annealed at 500°C for 60 s and 550° C for 30 s displayed peaks of Mn with molar concentration near 3%. It was found that a ferromagnetic semiconductor at room temperature could be formed in diluted magnetic semiconductor based on GaMnN and InMnP additionally co-doped with Mg and Zn, respectively.",

author = "Yoon Shon and Jeon, {H. C.} and Park, {Y. S.} and Lee, {W. C.} and Lee, {Seung Joo} and Kim, {D. Y.} and Kim, {H. S.} and Kim, {H. J.} and Kang, {T. W.} and Park, {Y. J.} and Yoon, {Chong S.} and Chung, {K. S.}",

year = "2004",

month = sep,

day = "6",

doi = "10.1063/1.1790074",

language = "English",

volume = "85",

pages = "1736--1738",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Enhanced curie temperature of InMnP:Zn-Tc∼300 K

AU - Shon, Yoon

AU - Jeon, H. C.

AU - Park, Y. S.

AU - Lee, W. C.

AU - Lee, Seung Joo

AU - Kim, D. Y.

AU - Kim, H. S.

AU - Kim, H. J.

AU - Kang, T. W.

AU - Park, Y. J.

AU - Yoon, Chong S.

AU - Chung, K. S.

PY - 2004/9/6

Y1 - 2004/9/6

N2 - The characteristics of InMnP:Zn, with the application of enhanced Curi temperature was discussed. The sample by characterized by transmission electron microscopy and no evidence of secondary phase formation of InMn:Zn was found. It was observed that the energy dispersive spectroscopy (EDX) peaks measured for the samples annealed at 500°C for 60 s and 550° C for 30 s displayed peaks of Mn with molar concentration near 3%. It was found that a ferromagnetic semiconductor at room temperature could be formed in diluted magnetic semiconductor based on GaMnN and InMnP additionally co-doped with Mg and Zn, respectively.

AB - The characteristics of InMnP:Zn, with the application of enhanced Curi temperature was discussed. The sample by characterized by transmission electron microscopy and no evidence of secondary phase formation of InMn:Zn was found. It was observed that the energy dispersive spectroscopy (EDX) peaks measured for the samples annealed at 500°C for 60 s and 550° C for 30 s displayed peaks of Mn with molar concentration near 3%. It was found that a ferromagnetic semiconductor at room temperature could be formed in diluted magnetic semiconductor based on GaMnN and InMnP additionally co-doped with Mg and Zn, respectively.

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U2 - 10.1063/1.1790074

DO - 10.1063/1.1790074

M3 - Article

AN - SCOPUS:4944232597

SN - 0003-6951

VL - 85

SP - 1736

EP - 1738

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Enhanced curie temperature of InMnP:Zn-T_c∼300 K

Abstract

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