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Enhanced curie temperature of InMnP:Zn-Tc∼300 K

  • Yoon Shon
  • , H. C. Jeon
  • , Y. S. Park
  • , W. C. Lee
  • , Seung Joo Lee
  • , D. Y. Kim
  • , H. S. Kim
  • , H. J. Kim
  • , T. W. Kang
  • , Y. J. Park
  • , Chong S. Yoon
  • , K. S. Chung

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The characteristics of InMnP:Zn, with the application of enhanced Curi temperature was discussed. The sample by characterized by transmission electron microscopy and no evidence of secondary phase formation of InMn:Zn was found. It was observed that the energy dispersive spectroscopy (EDX) peaks measured for the samples annealed at 500°C for 60 s and 550° C for 30 s displayed peaks of Mn with molar concentration near 3%. It was found that a ferromagnetic semiconductor at room temperature could be formed in diluted magnetic semiconductor based on GaMnN and InMnP additionally co-doped with Mg and Zn, respectively.

Original languageEnglish
Pages (from-to)1736-1738
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number10
DOIs
StatePublished - 6 Sep 2004

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