Abstract
The characteristics of InMnP:Zn, with the application of enhanced Curi temperature was discussed. The sample by characterized by transmission electron microscopy and no evidence of secondary phase formation of InMn:Zn was found. It was observed that the energy dispersive spectroscopy (EDX) peaks measured for the samples annealed at 500°C for 60 s and 550° C for 30 s displayed peaks of Mn with molar concentration near 3%. It was found that a ferromagnetic semiconductor at room temperature could be formed in diluted magnetic semiconductor based on GaMnN and InMnP additionally co-doped with Mg and Zn, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 1736-1738 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 85 |
| Issue number | 10 |
| DOIs | |
| State | Published - 6 Sep 2004 |
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