Enhanced Curie temperature persisting between 100 and 200 K (∼50 K by theory) with Mn (∼0.290%) based on InMnP:Zn

Yoon Shon; H. C. Jeon; Sejoon Lee; S. W. Lee; D. Y. Kim; T. W. Kang; Eun Kyu Kim; Chong S. Yoon; C. K. Kim; Y. J. Park; Yongmin Kim; J. M. Baik; J. L. Lee

doi:10.1016/j.jcrysgro.2006.10.133

Enhanced Curie temperature persisting between 100 and 200 K (∼50 K by theory) with Mn (∼0.290%) based on InMnP:Zn

Yoon Shon, H. C. Jeon, Sejoon Lee, S. W. Lee, D. Y. Kim, T. W. Kang, Eun Kyu Kim, Chong S. Yoon, C. K. Kim, Y. J. Park, Yongmin Kim, J. M. Baik, J. L. Lee

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3 Scopus citations

Abstract

The samples with the Mn concentrations of 0.290% and 0.062% revealed that both in the calculated diffraction pattern and experimental pattern of transmission electron microscopy (TEM), the FCC lattice was still maintained after the Mn doping. The regularly spaced spots of ordered Mn produce the anomalous Hall effect (AHE) showing the characteristics of diluted magnetic semiconductor, which is caused by hole-mediated ferromagnetism due to the increase of hole concentration in tetrahedrally coordinated semiconductor. Ferromagnetic semiconductor of T_c between 100 and 200 K demonstrated by TEM and AHE can be formed in diluted magnetic semiconductor based on InMnP:Zn epilayers additionally co-doped with Zn.

Original language	English
Pages (from-to)	289-293
Number of pages	5
Journal	Journal of Crystal Growth
Volume	297
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.10.133
State	Published - 29 Dec 2006

Keywords

A3. Metalorganic chemical vapor deposition
A3. Molecular beam epitaxy
B2. Magnetic materials
B2. Semiconducting indium phosphide

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10.1016/j.jcrysgro.2006.10.133

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Shon, Y., Jeon, H. C., Lee, S., Lee, S. W., Kim, D. Y., Kang, T. W., Kim, E. K., Yoon, C. S., Kim, C. K., Park, Y. J., Kim, Y., Baik, J. M., & Lee, J. L. (2006). Enhanced Curie temperature persisting between 100 and 200 K (∼50 K by theory) with Mn (∼0.290%) based on InMnP:Zn. Journal of Crystal Growth, 297(2), 289-293. https://doi.org/10.1016/j.jcrysgro.2006.10.133

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title = "Enhanced Curie temperature persisting between 100 and 200 K (∼50 K by theory) with Mn (∼0.290%) based on InMnP:Zn",

abstract = "The samples with the Mn concentrations of 0.290% and 0.062% revealed that both in the calculated diffraction pattern and experimental pattern of transmission electron microscopy (TEM), the FCC lattice was still maintained after the Mn doping. The regularly spaced spots of ordered Mn produce the anomalous Hall effect (AHE) showing the characteristics of diluted magnetic semiconductor, which is caused by hole-mediated ferromagnetism due to the increase of hole concentration in tetrahedrally coordinated semiconductor. Ferromagnetic semiconductor of Tc between 100 and 200 K demonstrated by TEM and AHE can be formed in diluted magnetic semiconductor based on InMnP:Zn epilayers additionally co-doped with Zn.",

keywords = "A3. Metalorganic chemical vapor deposition, A3. Molecular beam epitaxy, B2. Magnetic materials, B2. Semiconducting indium phosphide",

author = "Yoon Shon and Jeon, {H. C.} and Sejoon Lee and Lee, {S. W.} and Kim, {D. Y.} and Kang, {T. W.} and Kim, {Eun Kyu} and Yoon, {Chong S.} and Kim, {C. K.} and Park, {Y. J.} and Yongmin Kim and Baik, {J. M.} and Lee, {J. L.}",

year = "2006",

month = dec,

day = "29",

doi = "10.1016/j.jcrysgro.2006.10.133",

language = "English",

volume = "297",

pages = "289--293",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "2",

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TY - JOUR

T1 - Enhanced Curie temperature persisting between 100 and 200 K (∼50 K by theory) with Mn (∼0.290%) based on InMnP:Zn

AU - Shon, Yoon

AU - Jeon, H. C.

AU - Lee, Sejoon

AU - Lee, S. W.

AU - Kim, D. Y.

AU - Kang, T. W.

AU - Kim, Eun Kyu

AU - Yoon, Chong S.

AU - Kim, C. K.

AU - Park, Y. J.

AU - Kim, Yongmin

AU - Baik, J. M.

AU - Lee, J. L.

PY - 2006/12/29

Y1 - 2006/12/29

N2 - The samples with the Mn concentrations of 0.290% and 0.062% revealed that both in the calculated diffraction pattern and experimental pattern of transmission electron microscopy (TEM), the FCC lattice was still maintained after the Mn doping. The regularly spaced spots of ordered Mn produce the anomalous Hall effect (AHE) showing the characteristics of diluted magnetic semiconductor, which is caused by hole-mediated ferromagnetism due to the increase of hole concentration in tetrahedrally coordinated semiconductor. Ferromagnetic semiconductor of Tc between 100 and 200 K demonstrated by TEM and AHE can be formed in diluted magnetic semiconductor based on InMnP:Zn epilayers additionally co-doped with Zn.

AB - The samples with the Mn concentrations of 0.290% and 0.062% revealed that both in the calculated diffraction pattern and experimental pattern of transmission electron microscopy (TEM), the FCC lattice was still maintained after the Mn doping. The regularly spaced spots of ordered Mn produce the anomalous Hall effect (AHE) showing the characteristics of diluted magnetic semiconductor, which is caused by hole-mediated ferromagnetism due to the increase of hole concentration in tetrahedrally coordinated semiconductor. Ferromagnetic semiconductor of Tc between 100 and 200 K demonstrated by TEM and AHE can be formed in diluted magnetic semiconductor based on InMnP:Zn epilayers additionally co-doped with Zn.

KW - A3. Metalorganic chemical vapor deposition

KW - A3. Molecular beam epitaxy

KW - B2. Magnetic materials

KW - B2. Semiconducting indium phosphide

UR - http://www.scopus.com/inward/record.url?scp=33845596540&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2006.10.133

DO - 10.1016/j.jcrysgro.2006.10.133

M3 - Article

AN - SCOPUS:33845596540

SN - 0022-0248

VL - 297

SP - 289

EP - 293

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Enhanced Curie temperature persisting between 100 and 200 K (∼50 K by theory) with Mn (∼0.290%) based on InMnP:Zn

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