Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

D. J. Lee; C. S. Park; Cheol Jin Lee; J. D. Song; H. C. Koo; Chong S. Yoon; Im Taek Yoon; H. S. Kim; T. W. Kang; Yoon Shon

doi:10.1016/j.cap.2014.01.017

Enhanced ferromagnetism by preventing antiferromagnetic MnO₂ in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

D. J. Lee, C. S. Park, Cheol Jin Lee, J. D. Song, H. C. Koo, Chong S. Yoon, Im Taek Yoon, H. S. Kim, T. W. Kang, Yoon Shon

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase T_c (>300 K) by preventing MnO₂. After milling 1-3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO₂ and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO₂ is considered to originate from the increased p-d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.

Original language	English
Pages (from-to)	558-562
Number of pages	5
Journal	Current Applied Physics
Volume	14
Issue number	4
DOIs	https://doi.org/10.1016/j.cap.2014.01.017
State	Published - Apr 2014

Keywords

Increased T
MBE
p-type InP:Be/Mn/InP:Be triple layers

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title = "Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy",

abstract = "The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1-3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p-d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.",

keywords = "Increased T, MBE, p-type InP:Be/Mn/InP:Be triple layers",

author = "Lee, {D. J.} and Park, {C. S.} and Lee, {Cheol Jin} and Song, {J. D.} and Koo, {H. C.} and Yoon, {Chong S.} and Yoon, {Im Taek} and Kim, {H. S.} and Kang, {T. W.} and Yoon Shon",

year = "2014",

month = apr,

doi = "10.1016/j.cap.2014.01.017",

language = "English",

volume = "14",

pages = "558--562",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

AU - Lee, D. J.

AU - Park, C. S.

AU - Lee, Cheol Jin

AU - Song, J. D.

AU - Koo, H. C.

AU - Yoon, Chong S.

AU - Yoon, Im Taek

AU - Kim, H. S.

AU - Kang, T. W.

AU - Shon, Yoon

PY - 2014/4

Y1 - 2014/4

N2 - The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1-3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p-d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.

AB - The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1-3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p-d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.

KW - Increased T

KW - MBE

KW - p-type InP:Be/Mn/InP:Be triple layers

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DO - 10.1016/j.cap.2014.01.017

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SN - 1567-1739

VL - 14

SP - 558

EP - 562

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4

ER -

Enhanced ferromagnetism by preventing antiferromagnetic MnO₂ in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

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Keywords

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