Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

D. J. Lee; C. S. Park; Cheol Jin Lee; J. D. Song; H. C. Koo; Chong S. Yoon; Im Taek Yoon; H. S. Kim; T. W. Kang; Yoon Shon

doi:10.1016/j.cap.2014.01.017

Enhanced ferromagnetism by preventing antiferromagnetic MnO₂ in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

D. J. Lee
, C. S. Park
, Cheol Jin Lee
, J. D. Song
, H. C. Koo
, Chong S. Yoon
, Im Taek Yoon
, H. S. Kim
, T. W. Kang
, Yoon Shon

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase T_c (>300 K) by preventing MnO₂. After milling 1-3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO₂ and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO₂ is considered to originate from the increased p-d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.

Original language	English
Pages (from-to)	558-562
Number of pages	5
Journal	Current Applied Physics
Volume	14
Issue number	4
DOIs	https://doi.org/10.1016/j.cap.2014.01.017
State	Published - Apr 2014

Keywords

Increased T
MBE
p-type InP:Be/Mn/InP:Be triple layers

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10.1016/j.cap.2014.01.017

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title = "Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy",

abstract = "The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1-3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p-d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.",

keywords = "Increased T, MBE, p-type InP:Be/Mn/InP:Be triple layers",

author = "Lee, \{D. J.\} and Park, \{C. S.\} and Lee, \{Cheol Jin\} and Song, \{J. D.\} and Koo, \{H. C.\} and Yoon, \{Chong S.\} and Yoon, \{Im Taek\} and Kim, \{H. S.\} and Kang, \{T. W.\} and Yoon Shon",

year = "2014",

month = apr,

doi = "10.1016/j.cap.2014.01.017",

language = "English",

volume = "14",

pages = "558--562",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "4",

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TY - JOUR

T1 - Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

AU - Lee, D. J.

AU - Park, C. S.

AU - Lee, Cheol Jin

AU - Song, J. D.

AU - Koo, H. C.

AU - Yoon, Chong S.

AU - Yoon, Im Taek

AU - Kim, H. S.

AU - Kang, T. W.

AU - Shon, Yoon

PY - 2014/4

Y1 - 2014/4

N2 - The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1-3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p-d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.

AB - The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1-3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p-d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.

KW - Increased T

KW - MBE

KW - p-type InP:Be/Mn/InP:Be triple layers

UR - https://www.scopus.com/pages/publications/84894263046

U2 - 10.1016/j.cap.2014.01.017

DO - 10.1016/j.cap.2014.01.017

M3 - Article

AN - SCOPUS:84894263046

SN - 1567-1739

VL - 14

SP - 558

EP - 562

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4

ER -

Enhanced ferromagnetism by preventing antiferromagnetic MnO₂ in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

Abstract

Keywords

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