Enhanced ferromagnetism in H2O2 -treated p- (Zn 0.93Mn0.07) O layer

Sejoon Lee; Yoon Shon; Deuk Young Kim; Tae Won Kang; Chong S. Yoon

doi:10.1063/1.3294635

Enhanced ferromagnetism in H₂O₂ -treated p- (Zn _0.93Mn_0.07) O layer

Sejoon Lee, Yoon Shon, Deuk Young Kim, Tae Won Kang, Chong S. Yoon

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Abstract

Enhanced ferromagnetism was observed from the H₂O₂ -treated p -type (Zn_0.93Mn_0.07) O:As layer. Compared with the untreated sample, the H₂O₂ -treated sample showed the enlarged ferromagnetic hysteresis loop with approximately two-times-increased spontaneous magnetization. And also, in comparison with the untreated sample (T_C ∼280 K), the H₂O₂ -treated sample exhibited to have the increased T_C persisting up to above 350 K. These results were confirmed to originate from the enhanced p-d hybridization due to the decrease in negatively charged residual background carriers. This is because the increased effective g -factor resulting from the decrease in oxygen-related defects acting as native deep donors was observed from the H ₂O₂ -treated sample.

Original language	English
Article number	042115
Journal	Applied Physics Letters
Volume	96
Issue number	4
DOIs	https://doi.org/10.1063/1.3294635
State	Published - 2010

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@article{815892b0908b468fa92a97822750d6b3,

title = "Enhanced ferromagnetism in H2O2 -treated p- (Zn 0.93Mn0.07) O layer",

abstract = "Enhanced ferromagnetism was observed from the H2O2 -treated p -type (Zn0.93Mn0.07) O:As layer. Compared with the untreated sample, the H2O2 -treated sample showed the enlarged ferromagnetic hysteresis loop with approximately two-times-increased spontaneous magnetization. And also, in comparison with the untreated sample (TC ∼280 K), the H2O2 -treated sample exhibited to have the increased TC persisting up to above 350 K. These results were confirmed to originate from the enhanced p-d hybridization due to the decrease in negatively charged residual background carriers. This is because the increased effective g -factor resulting from the decrease in oxygen-related defects acting as native deep donors was observed from the H 2O2 -treated sample.",

author = "Sejoon Lee and Yoon Shon and Kim, {Deuk Young} and {Won Kang}, Tae and Yoon, {Chong S.}",

year = "2010",

doi = "10.1063/1.3294635",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Enhanced ferromagnetism in H2O2 -treated p- (Zn 0.93Mn0.07) O layer

AU - Lee, Sejoon

AU - Shon, Yoon

AU - Kim, Deuk Young

AU - Won Kang, Tae

AU - Yoon, Chong S.

PY - 2010

Y1 - 2010

N2 - Enhanced ferromagnetism was observed from the H2O2 -treated p -type (Zn0.93Mn0.07) O:As layer. Compared with the untreated sample, the H2O2 -treated sample showed the enlarged ferromagnetic hysteresis loop with approximately two-times-increased spontaneous magnetization. And also, in comparison with the untreated sample (TC ∼280 K), the H2O2 -treated sample exhibited to have the increased TC persisting up to above 350 K. These results were confirmed to originate from the enhanced p-d hybridization due to the decrease in negatively charged residual background carriers. This is because the increased effective g -factor resulting from the decrease in oxygen-related defects acting as native deep donors was observed from the H 2O2 -treated sample.

AB - Enhanced ferromagnetism was observed from the H2O2 -treated p -type (Zn0.93Mn0.07) O:As layer. Compared with the untreated sample, the H2O2 -treated sample showed the enlarged ferromagnetic hysteresis loop with approximately two-times-increased spontaneous magnetization. And also, in comparison with the untreated sample (TC ∼280 K), the H2O2 -treated sample exhibited to have the increased TC persisting up to above 350 K. These results were confirmed to originate from the enhanced p-d hybridization due to the decrease in negatively charged residual background carriers. This is because the increased effective g -factor resulting from the decrease in oxygen-related defects acting as native deep donors was observed from the H 2O2 -treated sample.

UR - http://www.scopus.com/inward/record.url?scp=75749143139&partnerID=8YFLogxK

U2 - 10.1063/1.3294635

DO - 10.1063/1.3294635

M3 - Article

AN - SCOPUS:75749143139

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042115

ER -

Enhanced ferromagnetism in H₂O₂ -treated p- (Zn _0.93Mn_0.07) O layer

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