Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study
- Jun Hyeok Choi
- , Woo Seok Kang
- , Dohyung Kim
- , Ji Hun Kim
- , Jun Ho Lee
- , Kyeong Yong Kim
- , Byoung Gue Min
- , Dong Min Kang
- , Hyun Seok Kim
Research output: Contribution to journal › Article › peer-review
10
Scopus
citations