Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

Jun Hyeok Choi, Woo Seok Kang, Dohyung Kim, Ji Hun Kim, Jun Ho Lee, Kyeong Yong Kim, Byoung Gue Min, Dong Min Kang, Hyun Seok Kim

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

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