Enhanced pentacene OTFTs with suspended source/drain electrode

Yong Hoon Kim; Yong Uk Lee; Jeong In Han; Sang Myeon Han; Woocheul Lee; Min Koo Han; Young Hwan Park; Myung Hwan Oh; Jungwon Kang

doi:10.1889/1.2785267

Enhanced pentacene OTFTs with suspended source/drain electrode

Yong Hoon Kim, Yong Uk Lee, Jeong In Han, Sang Myeon Han, Woocheul Lee, Min Koo Han, Young Hwan Park, Myung Hwan Oh, Jungwon Kang

Department of Chemical and Biochemical Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We have proposed and fabricated a new triisopropylsilyl (TIPS) pentacene organic thin-film transistor (OTFT) by employing suspended source/drain (SSD) electrode which successfully improves the electrical properties such as field-effect mobility, on/off ratio, threshold voltage (V_TH) and subthreshold slope compared to conventional bottom-contact OTFTs. The SSD electrode was fabricated by using Cr/Au double layer where the Cr was used as a sacrificial layer. By completely etching the Cr layer in the active area, a suspended Au source/drain structure is constructed forming a top-contact-like geometry. The field-effect mobility of ink-jet printed TIPS pentacene OTFT increased from 0.007 cm²/Vs to 0.066 cm²/Vs, on/off ratio increased from 10⁴ to 10⁶, V_TH decreased from +9 V to -3 V and subthreshold slope decreased from 4.5 V/decade to 0.9 V/decade.

Original language	English
Pages (from-to)	214-217
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	38
Issue number	1
DOIs	https://doi.org/10.1889/1.2785267
State	Published - 2007
Event	2007 SID International Symposium - Long Beach, CA, United States Duration: 23 May 2007 → 25 May 2007

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title = "Enhanced pentacene OTFTs with suspended source/drain electrode",

abstract = "We have proposed and fabricated a new triisopropylsilyl (TIPS) pentacene organic thin-film transistor (OTFT) by employing suspended source/drain (SSD) electrode which successfully improves the electrical properties such as field-effect mobility, on/off ratio, threshold voltage (VTH) and subthreshold slope compared to conventional bottom-contact OTFTs. The SSD electrode was fabricated by using Cr/Au double layer where the Cr was used as a sacrificial layer. By completely etching the Cr layer in the active area, a suspended Au source/drain structure is constructed forming a top-contact-like geometry. The field-effect mobility of ink-jet printed TIPS pentacene OTFT increased from 0.007 cm2/Vs to 0.066 cm2/Vs, on/off ratio increased from 104 to 106, VTH decreased from +9 V to -3 V and subthreshold slope decreased from 4.5 V/decade to 0.9 V/decade.",

author = "Kim, {Yong Hoon} and Lee, {Yong Uk} and Han, {Jeong In} and Han, {Sang Myeon} and Woocheul Lee and Han, {Min Koo} and Park, {Young Hwan} and Oh, {Myung Hwan} and Jungwon Kang",

year = "2007",

doi = "10.1889/1.2785267",

language = "English",

volume = "38",

pages = "214--217",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc",

number = "1",

note = "2007 SID International Symposium ; Conference date: 23-05-2007 Through 25-05-2007",

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T1 - Enhanced pentacene OTFTs with suspended source/drain electrode

AU - Kim, Yong Hoon

AU - Lee, Yong Uk

AU - Han, Jeong In

AU - Han, Sang Myeon

AU - Lee, Woocheul

AU - Han, Min Koo

AU - Park, Young Hwan

AU - Oh, Myung Hwan

AU - Kang, Jungwon

PY - 2007

Y1 - 2007

N2 - We have proposed and fabricated a new triisopropylsilyl (TIPS) pentacene organic thin-film transistor (OTFT) by employing suspended source/drain (SSD) electrode which successfully improves the electrical properties such as field-effect mobility, on/off ratio, threshold voltage (VTH) and subthreshold slope compared to conventional bottom-contact OTFTs. The SSD electrode was fabricated by using Cr/Au double layer where the Cr was used as a sacrificial layer. By completely etching the Cr layer in the active area, a suspended Au source/drain structure is constructed forming a top-contact-like geometry. The field-effect mobility of ink-jet printed TIPS pentacene OTFT increased from 0.007 cm2/Vs to 0.066 cm2/Vs, on/off ratio increased from 104 to 106, VTH decreased from +9 V to -3 V and subthreshold slope decreased from 4.5 V/decade to 0.9 V/decade.

AB - We have proposed and fabricated a new triisopropylsilyl (TIPS) pentacene organic thin-film transistor (OTFT) by employing suspended source/drain (SSD) electrode which successfully improves the electrical properties such as field-effect mobility, on/off ratio, threshold voltage (VTH) and subthreshold slope compared to conventional bottom-contact OTFTs. The SSD electrode was fabricated by using Cr/Au double layer where the Cr was used as a sacrificial layer. By completely etching the Cr layer in the active area, a suspended Au source/drain structure is constructed forming a top-contact-like geometry. The field-effect mobility of ink-jet printed TIPS pentacene OTFT increased from 0.007 cm2/Vs to 0.066 cm2/Vs, on/off ratio increased from 104 to 106, VTH decreased from +9 V to -3 V and subthreshold slope decreased from 4.5 V/decade to 0.9 V/decade.

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DO - 10.1889/1.2785267

M3 - Conference article

AN - SCOPUS:34547878051

SN - 0097-966X

VL - 38

SP - 214

EP - 217

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 2007 SID International Symposium

Y2 - 23 May 2007 through 25 May 2007

ER -

Enhanced pentacene OTFTs with suspended source/drain electrode

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