Enhanced pentacene OTFTs with suspended source/drain electrode

Yong Hoon Kim; Yong Uk Lee; Jeong In Han; Sang Myeon Han; Woocheul Lee; Min Koo Han; Young Hwan Park; Myung Hwan Oh; Jungwon Kang

doi:10.1889/1.2785267

Enhanced pentacene OTFTs with suspended source/drain electrode

Yong Hoon Kim
, Yong Uk Lee
, Jeong In Han
, Sang Myeon Han
, Woocheul Lee
, Min Koo Han
, Young Hwan Park
, Myung Hwan Oh
, Jungwon Kang

Department of Chemical and Biochemical Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We have proposed and fabricated a new triisopropylsilyl (TIPS) pentacene organic thin-film transistor (OTFT) by employing suspended source/drain (SSD) electrode which successfully improves the electrical properties such as field-effect mobility, on/off ratio, threshold voltage (V_TH) and subthreshold slope compared to conventional bottom-contact OTFTs. The SSD electrode was fabricated by using Cr/Au double layer where the Cr was used as a sacrificial layer. By completely etching the Cr layer in the active area, a suspended Au source/drain structure is constructed forming a top-contact-like geometry. The field-effect mobility of ink-jet printed TIPS pentacene OTFT increased from 0.007 cm²/Vs to 0.066 cm²/Vs, on/off ratio increased from 10⁴ to 10⁶, V_TH decreased from +9 V to -3 V and subthreshold slope decreased from 4.5 V/decade to 0.9 V/decade.

Original language	English
Pages (from-to)	214-217
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	38
Issue number	1
DOIs	https://doi.org/10.1889/1.2785267
State	Published - 2007
Event	2007 SID International Symposium - Long Beach, CA, United States Duration: 23 May 2007 → 25 May 2007

Access to Document

10.1889/1.2785267

Cite this

@article{7fad6a52d3da4b2196273213daa6f8f8,

title = "Enhanced pentacene OTFTs with suspended source/drain electrode",

abstract = "We have proposed and fabricated a new triisopropylsilyl (TIPS) pentacene organic thin-film transistor (OTFT) by employing suspended source/drain (SSD) electrode which successfully improves the electrical properties such as field-effect mobility, on/off ratio, threshold voltage (VTH) and subthreshold slope compared to conventional bottom-contact OTFTs. The SSD electrode was fabricated by using Cr/Au double layer where the Cr was used as a sacrificial layer. By completely etching the Cr layer in the active area, a suspended Au source/drain structure is constructed forming a top-contact-like geometry. The field-effect mobility of ink-jet printed TIPS pentacene OTFT increased from 0.007 cm2/Vs to 0.066 cm2/Vs, on/off ratio increased from 104 to 106, VTH decreased from +9 V to -3 V and subthreshold slope decreased from 4.5 V/decade to 0.9 V/decade.",

author = "Kim, \{Yong Hoon\} and Lee, \{Yong Uk\} and Han, \{Jeong In\} and Han, \{Sang Myeon\} and Woocheul Lee and Han, \{Min Koo\} and Park, \{Young Hwan\} and Oh, \{Myung Hwan\} and Jungwon Kang",

year = "2007",

doi = "10.1889/1.2785267",

language = "English",

volume = "38",

pages = "214--217",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc",

number = "1",

note = "2007 SID International Symposium ; Conference date: 23-05-2007 Through 25-05-2007",

}

TY - JOUR

T1 - Enhanced pentacene OTFTs with suspended source/drain electrode

AU - Kim, Yong Hoon

AU - Lee, Yong Uk

AU - Han, Jeong In

AU - Han, Sang Myeon

AU - Lee, Woocheul

AU - Han, Min Koo

AU - Park, Young Hwan

AU - Oh, Myung Hwan

AU - Kang, Jungwon

PY - 2007

Y1 - 2007

N2 - We have proposed and fabricated a new triisopropylsilyl (TIPS) pentacene organic thin-film transistor (OTFT) by employing suspended source/drain (SSD) electrode which successfully improves the electrical properties such as field-effect mobility, on/off ratio, threshold voltage (VTH) and subthreshold slope compared to conventional bottom-contact OTFTs. The SSD electrode was fabricated by using Cr/Au double layer where the Cr was used as a sacrificial layer. By completely etching the Cr layer in the active area, a suspended Au source/drain structure is constructed forming a top-contact-like geometry. The field-effect mobility of ink-jet printed TIPS pentacene OTFT increased from 0.007 cm2/Vs to 0.066 cm2/Vs, on/off ratio increased from 104 to 106, VTH decreased from +9 V to -3 V and subthreshold slope decreased from 4.5 V/decade to 0.9 V/decade.

AB - We have proposed and fabricated a new triisopropylsilyl (TIPS) pentacene organic thin-film transistor (OTFT) by employing suspended source/drain (SSD) electrode which successfully improves the electrical properties such as field-effect mobility, on/off ratio, threshold voltage (VTH) and subthreshold slope compared to conventional bottom-contact OTFTs. The SSD electrode was fabricated by using Cr/Au double layer where the Cr was used as a sacrificial layer. By completely etching the Cr layer in the active area, a suspended Au source/drain structure is constructed forming a top-contact-like geometry. The field-effect mobility of ink-jet printed TIPS pentacene OTFT increased from 0.007 cm2/Vs to 0.066 cm2/Vs, on/off ratio increased from 104 to 106, VTH decreased from +9 V to -3 V and subthreshold slope decreased from 4.5 V/decade to 0.9 V/decade.

UR - https://www.scopus.com/pages/publications/34547878051

U2 - 10.1889/1.2785267

DO - 10.1889/1.2785267

M3 - Conference article

AN - SCOPUS:34547878051

SN - 0097-966X

VL - 38

SP - 214

EP - 217

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 2007 SID International Symposium

Y2 - 23 May 2007 through 25 May 2007

ER -

Enhanced pentacene OTFTs with suspended source/drain electrode

Abstract

Access to Document

Other files and links

Fingerprint

Cite this